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10.3390/ma15072379
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Article

Carbon and Manganese in Semi-Insulating Bulk GaN Crystals

by
Mikolaj Amilusik
1,*,
Marcin Zajac
1,
Tomasz Sochacki
1,
Boleslaw Lucznik
1,
Michal Fijalkowski
1,
Malgorzata Iwinska
1,
Damian Wlodarczyk
2,
Ajeesh Kumar Somakumar
2,
Andrzej Suchocki
2 and
Michal Bockowski
1,3
1
Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
2
Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, 02-668 Warsaw, Poland
3
Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University, C3-1 Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
*
Author to whom correspondence should be addressed.
Materials 2022, 15(7), 2379; https://doi.org/10.3390/ma15072379
Submission received: 15 February 2022 / Revised: 7 March 2022 / Accepted: 17 March 2022 / Published: 23 March 2022
(This article belongs to the Section Materials Chemistry)
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Abstract

Co-doping with manganese and carbon was performed in gallium nitride grown by halide vapor phase epitaxy method. Native seeds of high structural quality were used. The crystallized material was examined in terms of its structural, optical, and electrical properties. For that purpose, different characterization methods: x-ray diffraction, Raman spectroscopy, low-temperature photoluminescence, and temperature-dependent Hall effect measurements, were applied. The physical properties of the co-doped samples were compared with the properties of crystals grown in the same reactor, on similar seeds, but doped only with manganese or carbon. A comparison of the electrical and optical properties allowed to determine the role of manganese and carbon in doped and co-doped gallium nitride crystals.
Keywords: gallium nitride; halide vapor phase epitaxy; co-doping; carbon; manganese gallium nitride; halide vapor phase epitaxy; co-doping; carbon; manganese

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MDPI and ACS Style

Amilusik, M.; Zajac, M.; Sochacki, T.; Lucznik, B.; Fijalkowski, M.; Iwinska, M.; Wlodarczyk, D.; Somakumar, A.K.; Suchocki, A.; Bockowski, M. Carbon and Manganese in Semi-Insulating Bulk GaN Crystals. Materials 2022, 15, 2379. https://doi.org/10.3390/ma15072379

AMA Style

Amilusik M, Zajac M, Sochacki T, Lucznik B, Fijalkowski M, Iwinska M, Wlodarczyk D, Somakumar AK, Suchocki A, Bockowski M. Carbon and Manganese in Semi-Insulating Bulk GaN Crystals. Materials. 2022; 15(7):2379. https://doi.org/10.3390/ma15072379

Chicago/Turabian Style

Amilusik, Mikolaj, Marcin Zajac, Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Malgorzata Iwinska, Damian Wlodarczyk, Ajeesh Kumar Somakumar, Andrzej Suchocki, and Michal Bockowski. 2022. "Carbon and Manganese in Semi-Insulating Bulk GaN Crystals" Materials 15, no. 7: 2379. https://doi.org/10.3390/ma15072379

APA Style

Amilusik, M., Zajac, M., Sochacki, T., Lucznik, B., Fijalkowski, M., Iwinska, M., Wlodarczyk, D., Somakumar, A. K., Suchocki, A., & Bockowski, M. (2022). Carbon and Manganese in Semi-Insulating Bulk GaN Crystals. Materials, 15(7), 2379. https://doi.org/10.3390/ma15072379

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