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Journal: Materials, 2022
Volume: 15
Number: 6738
Article:
Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640
Authors:
by
Yi-Yueh Chen, Su-Jien Lin and Shou-Yi Chang
Link:
https://www.mdpi.com/1996-1944/15/19/6738
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