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Journal: Materials, 2022
Volume: 15
Number: 6738

Article: Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640
Authors: by Yi-Yueh Chen, Su-Jien Lin and Shou-Yi Chang
Link: https://www.mdpi.com/1996-1944/15/19/6738

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