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Journal: Materials, 2021
Volume: 14
Number: 6128
Article:
Ground State Properties of the Wide Band Gap Semiconductor Beryllium Sulfide (BeS)
Authors:
by
Blaise A. Ayirizia, Janee’ S. Brumfield, Yuriy Malozovsky and Diola Bagayoko
Link:
https://www.mdpi.com/1996-1944/14/20/6128
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