Order Article Reprints

Hsieh Y-L, Chang L-B, Jeng M-J, Li C-Y, Shih C-F, Wang H-T, Ding Z-X, Chang C-N, Lo H-Z, Chiang Y-P. Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors. Materials. 2020; 13(21):4956. https://doi.org/10.3390/ma13214956

Hsieh, Yu-Li, Liann-Be Chang, Ming-Jer Jeng, Chung-Yi Li, Chien-Fu Shih, Hung-Tsung Wang, Zi-Xin Ding, Chia-Ning Chang, Hao-Zong Lo, and Yuan-Po Chiang. 2020. "Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors" Materials 13, no. 21: 4956. https://doi.org/10.3390/ma13214956

Hsieh, Y.-L., Chang, L.-B., Jeng, M.-J., Li, C.-Y., Shih, C.-F., Wang, H.-T., Ding, Z.-X., Chang, C.-N., Lo, H.-Z., & Chiang, Y.-P. (2020). Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors. Materials, 13(21), 4956. https://doi.org/10.3390/ma13214956