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Low Resistance TiO2/p-Si Heterojunction for Tandem Solar Cells

Center for Physical Sciences and Technology, Savanorių ave. 231, 02300 Vilnius, Lithuania
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Materials 2020, 13(12), 2857; https://doi.org/10.3390/ma13122857
Received: 29 May 2020 / Revised: 17 June 2020 / Accepted: 18 June 2020 / Published: 25 June 2020
Niobium-doped titanium dioxide (Ti1−xNbxO2) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystallized into the an anatase structure upon reductive post-deposition annealing at 600 °C in an H2 atmosphere for 30 min. It was shown that the Ti0.72Nb0.28O2/p+-Si heterojunction fabricated on low resistivity silicon (10−3 Ω cm) had linear current–voltage characteristic with a specific contact resistivity as low as 23 mΩ·cm2. As the resistance dependence on temperature revealed, the current across the Ti0.72Nb0.28O2/p+-Si heterojunction was mainly determined by the band-to-band charge carrier tunneling through the junction. View Full-Text
Keywords: thin films; solar cells; TiO2/p-Si heterojunction; atomic layer deposition thin films; solar cells; TiO2/p-Si heterojunction; atomic layer deposition
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Ašmontas, S.; Anbinderis, M.; Gradauskas, J.; Juškėnas, R.; Leinartas, K.; Lučun, A.; Selskis, A.; Staišiūnas, L.; Stanionytė, S.; Sužiedėlis, A.; Šilėnas, A.; Širmulis, E. Low Resistance TiO2/p-Si Heterojunction for Tandem Solar Cells. Materials 2020, 13, 2857.

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