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Journal: Materials, 2019
Volume: 12
Number: 2207

Article: Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC
Authors: by Johannes Steiner, Melissa Roder, Binh Duong Nguyen, Stefan Sandfeld, Andreas Danilewsky and Peter J. Wellmann
Link: https://www.mdpi.com/1996-1944/12/13/2207

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