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Open AccessArticle

Graphene Quantum Dots-ZnS Nanocomposites with Improved Photoelectric Performances

School of Resources and Environmental Engineering, Wuhan University of Technology, Wuhan 430070, China
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Materials 2018, 11(4), 512; https://doi.org/10.3390/ma11040512
Received: 28 February 2018 / Revised: 21 March 2018 / Accepted: 26 March 2018 / Published: 28 March 2018
ZnS-graphene quantum dot (GQDs) composites were synthesized by a simple solvothermal method, in which GQDs were prepared by a hydrothermal cutting process. The products were characterized by transmission electron microscopy, atomic force microscopy, X-ray diffraction and ultraviolet-visible absorption spectroscopy. The results show that GQDs were obtained by size tailoring of 1–4 graphene layers and combined with cubic ZnS nanoparticles to form ZnS-GQDs composites. The photocurrent and electrochemical behavior of the products were evaluated by transient photocurrent responses and electrochemical impedance spectra. The photocurrent density of ZnS-GQDs achieves the value of 2.32 × 10−5 A/cm2, which is 2.4-times as high as that of ZnS-graphene. GQDs serve as an electrical conducting material, which decreases the conductive path and accelerates the electron transfer. The charge-transfer resistance of ZnS-GQDs is much lower than that of ZnS-graphene and pure ZnS due to the effective electron separation and transfer ability upon the incorporation of GQDs. View Full-Text
Keywords: GQDs; ZnS-GQDs composites; photocurrent responses; electrochemical impedance spectra GQDs; ZnS-GQDs composites; photocurrent responses; electrochemical impedance spectra
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MDPI and ACS Style

Zhang, Z.; Fang, C.; Bing, X.; Lei, Y. Graphene Quantum Dots-ZnS Nanocomposites with Improved Photoelectric Performances. Materials 2018, 11, 512.

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