Next Article in Journal
Synthesis and Characterization of a Heterometallic Extended Architecture Based on a Manganese(II)-Substituted Sandwich-Type Polyoxotungstate
Next Article in Special Issue
Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation
Previous Article in Journal
Poly(lactic acid) (PLA) Based Tear Resistant and Biodegradable Flexible Films by Blown Film Extrusion
Previous Article in Special Issue
Mechanical, Thermodynamic and Electronic Properties of Wurtzite and Zinc-Blende GaN Crystals
Article Menu
Issue 1 (January) cover image

Export Article

Open AccessFeature PaperArticle
Materials 2018, 11(1), 153; https://doi.org/10.3390/ma11010153

GaN-Based Laser Wireless Power Transfer System

1
Department of Information Engineering, University of Padova, via Gradenigo 6B, 35131 Padova, Italy
2
Centro Giorgio Levi Cases, University of Padova, via Marzolo 9, 35131 Padova, Italy
3
Institut d’Electronique, de Microélectronique et de Nanotechnologie, Centre National de la Recherche Scientifique (IEMN-CNRS), Avenue Poincaré CS 60069, 59652 Villeneuve d’Ascq, France
4
Department of Physics and Astronomy, University of Padova, via Marzolo 8, 35131 Padova, Italy
*
Author to whom correspondence should be addressed.
Received: 25 November 2017 / Revised: 9 January 2018 / Accepted: 10 January 2018 / Published: 17 January 2018
(This article belongs to the Special Issue Light Emitting Diodes and Laser Diodes: Materials and Devices)
Full-Text   |   PDF [3813 KB, uploaded 17 January 2018]   |  

Abstract

The aim of this work is to present a potential application of gallium nitride-based optoelectronic devices. By using a laser diode and a photodetector, we designed and demonstrated a free-space compact and lightweight wireless power transfer system, whose efficiency is limited by the efficiency of the receiver. We analyzed the effect of the electrical load, temperature, partial absorption and optical excitation distribution on the efficiency, by identifying heating and band-filling as the most impactful processes. By comparing the final demonstrator with a commercial RF-based Qi system, we conclude that the efficiency is still low at close range, but is promising in medium to long range applications. Efficiency may not be a limiting factor, since this concept can enable entirely new possibilities and designs, especially relevant for space applications. View Full-Text
Keywords: laser diode; photodetector; wireless power transfer laser diode; photodetector; wireless power transfer
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

De Santi, C.; Meneghini, M.; Caria, A.; Dogmus, E.; Zegaoui, M.; Medjdoub, F.; Kalinic, B.; Cesca, T.; Meneghesso, G.; Zanoni, E. GaN-Based Laser Wireless Power Transfer System. Materials 2018, 11, 153.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top