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Borghese A, Di Costanzo A, Riccio M, Maresca L, Breglio G, Irace A. Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs. Energies. 2021; 14(23):8055. https://doi.org/10.3390/en14238055

Borghese, Alessandro, Alessandro Di Costanzo, Michele Riccio, Luca Maresca, Giovanni Breglio, and Andrea Irace. 2021. "Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs" Energies 14, no. 23: 8055. https://doi.org/10.3390/en14238055

Borghese, A., Di Costanzo, A., Riccio, M., Maresca, L., Breglio, G., & Irace, A. (2021). Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs. Energies, 14(23), 8055. https://doi.org/10.3390/en14238055