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Article

Bidirectional DC Converter with Frequency Control: Analysis and Implementation

Department of Electrical Engineering, National Yunlin University of Science and Technology, Yunlin 640, Taiwan
*
Author to whom correspondence should be addressed.
Energies 2018, 11(9), 2450; https://doi.org/10.3390/en11092450
Submission received: 18 August 2018 / Revised: 6 September 2018 / Accepted: 13 September 2018 / Published: 14 September 2018

Abstract

:
In this paper, a direct current (dc) converter with the abilities of bidirectional power transfer and soft switching characteristics is studied and implemented. The circuit schematic of the developed dc converter is built by a half-bridge converter and a center-tapped rectifier with synchronous rectifier. Under forward power transfer, a half-bridge circuit is controlled to regulate the low-voltage side at a stable value. For backward power transfer, a center-tapped rectifier with synchronous rectifier is regulated to control the high-voltage side at the desired voltage value, and the half-bridge circuit is operated as a voltage doubler rectifier. Active power devices are operated at zero-voltage switching using a series resonant technique on the high-voltage side with frequency modulation and inductive load operation. The practicability of the developed converter is established from experiments with a laboratory prototype circuit.

1. Introduction

To reduce air pollution and climate change, renewable energy sources with power electronic conversion have been demanded and developed in recent years. Bidirectional power converters [1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18] have been developed for alternating current (ac) to direct current (dc) conversion and dc–dc conversion. In references [1,2,3,4,5,6,7], ac–dc bidirectional power converters are employed between an ac power source and dc bus voltage, and dc–ac bidirectional power converters are widely employed in ac drive systems. Direct current to dc bidirectional power converters [8,9,10,11,12,13] are demanded for battery-based storage systems. Bidirectional power flow dc converters with dual full-bridge circuit topology or half-bridge circuit topology were proposed to deliver power between high-voltage side dc bus and low-voltage side storage devices. Duty cycle control is normally used in dual full-bridge converters to control load voltage and attain soft switching characteristics. The main drawbacks of dual full-bridge converters are complicated control scheme and high conduction losses under low effective duty cycle case with high circulating current. Resonant techniques with a frequency-control scheme have been developed in modern power converters with high circuit efficiency due to wide load range of soft switching characteristics. The dual full-bridge resonant converter in reference [14] achieves soft switching characteristics in forward power transfer. However, the soft switching characteristics were lost in this circuit topology in backward power transfer due to the non-symmetric circuits in both power flow operations. The circuit topologies of dual full-bridge resonant converters in references [15,16,17] are symmetric for both forward and backward power transfer. Therefore, active switches can achieve soft switching at turn-on instant to eliminate switching loss. However, one parallel inductor is used on the high-voltage side. The circulating current in this parallel inductor will result in additional power loss when the circuit is operated under forward power transfer.
A soft switching resonant converter is studied and implemented in this paper to have the benefits of bidirectional power transfer ability, soft switching characteristics and less power devices. The proposed circuit is constructed by a half-bridge circuit on the primary-side and a center-tapped rectifier on the secondary-side. The LLC resonant circuit with frequency control is used on high-voltage side to control secondary-side voltage, reach soft switching turn-on for main power devices. To achieve same LLC resonant characteristics for both forward and backward power transfer, a parallel inductor is connected between half-bridge leg and split input capacitors on the high-voltage side. Under forward power transfer, power switches on half-bridge circuit are controlled by frequency-modulation to generate a square voltage input to the resonant tank and regulate low-side voltage VL. Power switches on a center-tapped rectifier with synchronous switches are operated as synchronous rectifiers for reducing the conduction losses on the low-voltage side. Under forward power flow, the parallel inductor on the high-voltage side is disconnected (ac power switch is off) to reduce the power loss on this parallel inductor. When the proposed circuit is worked under backward power transfer, the parallel inductor is used on the high-voltage side to achieve LLC resonant characteristics. Power switches on the center-tapped rectifier are controlled to create a square voltage waveform on the primary-side of the isolated transformer and regulate high-side voltage VH. Finally, experimental results are presented to verify the feasibility of the proposed circuit.

2. Circuit Diagram

Figure 1a shows the circuit schematic of a conventional resonant converter with s center-tapped rectifier on the secondary side. The main drawback in Figure 1a is high conduction loss on secondary-side rectifier diodes for high current output. In order to reduce conduction loss on secondary-side diodes, synchronous switches instead of fast recovery diodes are used on the secondary-side as shown in Figure 1b. For achieving bidirectional power control, Figure 2a demonstrates the circuit structure of the developed bidirectional dc converter. The circuit differences between the proposed converter and conventional unidirectional half-bridge resonant converter shown in Figure 1b are one ac switch S and inductor Lm1 used in the proposed circuit to achieve LLC resonant behavior for both forward and backward power transfer. Therefore, the advantages of a conventional unidirectional LLC resonant converter all exist in the proposed circuit. Half-bridge circuit is employed on the high voltage side to clamp voltage ratings of power semiconductor devices Q1 and Q2 at VH. A center-tapped circuit topology with synchronous rectifier is employed on the secondary-side to reduce the conduction loss on the low-voltage side. An ac switch S is adopted on the primary-side to achieve resonant behavior when the adopted circuit is operated at backward power transfer. Figure 2b demonstrates the equivalent circuit of the developed circuit operated at forward power transfer from VH to VL. AC switch S is turned off. Cr, Lr and Lm2 are operated to achieve soft switching turn-on of Q1 and Q2. Power devices Q3 and Q4 on the low-voltage side operate as the synchronous switches. Therefore, the conduction losses on Q3 and Q4 are reduced at the low-voltage and high-current sides. Figure 2c illustrates circuit structure of the studied circuit operated at backward power transfer from VL to VH. At backward power transfer condition, power switch S is closed and Q1 and Q2 are turned off. Lm1, Cr and Lr are resonant. Thus, main switches Q3 and Q4 are turned on under zero-voltage switching. Table 1 gives the basic comparison between the proposed circuit and the conventional bidirectional dc–dc converters. It can be observed that the proposed converter has less component counts.

3. Principles of Operation

3.1. Forward Power Flow

If the converter is operated at forward power transfer as shown in Figure 2a, the power flow is from VH terminal to VL terminal. Power device S is controlled at the OFF state. Power switches Q1 and Q2 are regulated with frequency control to create a square voltage vab on the high-voltage side. Power switches Q3 and Q4 are operated as the synchronous switches to decrease conduction loss compared to the rectifier diodes with high voltage drop when diodes are conducting. The ON/OFF state of the synchronous switches are based on the current direction on the low-voltage side. Then a square voltage waveform can be created on the primary-side of the isolated transformer. Lm2, Lr and Cr are the magnetizing inductance, series resonant inductance and series resonant capacitance, respectively. Due to the inductive impedance of the resonant tank on the high-voltage side, as shown in Figure 3a, the soft switching characteristics of main switches Q1 and Q2 are achieved. The basic pulse-width modulation signals for forward power transfer operation are illustrated in Figure 3a. There are six operation modes under fr (series resonant frequency) > fsw (switching frequency). On the other hand, four operation modes per switching cycle can be observed if fsw > fr. Figure 4 illustrates the equivalent topological circuits for each mode of operation under forward power transfer. The principles of operation are discussed in what follows.
Mode 1 [t0 ~ t1]: At t0, vCQ1 = 0. Since iQ1(t0) < 0, DQ1 conducts. Thus, Q1 is turned on under zero voltage after t0. In mode 1, iLr > iLm2 so that iQ3 < 0 and DQ3 conducts. Thus, Q3 is forced to turn on. Due to low turn-on resistance Ron, the conduction losses on Q3 are reduced. In this mode, the voltage vab = VCH1 = VH/2 and vLm2 = nVL. The magnetizing current iLm2 will increase with the current slope nVL/Lm2. In mode 1, the current variation on Lm2 is calculated as ΔiLm2,1 = nVLΔt10/Lm2 where Δt10 is time duration in this mode. Cr and Lr are resonant under vab = VH/2, vLm2 = nVL and the series resonant frequency f r = 1 / 2 π C r L r . If fr > fsw, then iDQ3 will fall to zero. Thus, the next mode will go to mode 2. On the other hand, the circuit operation will go to mode 3 if fr < fsw.
Mode 2 [t1 ~ t2]: At time t1, iQ3 falls to zero. Then Q3 is forced to turn off. iLr will flow through Q1, Cr, Lr, Lm2 and CH1. Due to CH1 > Cr, Lr, Cr and Lm2 are resonant in mode 2 with vab = VH/2 and resonant frequency f p = 1 / 2 π C r ( L r + L m 2 ) . Mode 2 ends at the half of the switching frequency t = Tsw/2.
Mode 3 [t2 ~ t3]: At time t2, Q1 turns off and iLr(t2) > 0. After time t2, vCQ1 (vCQ2) is increased (decreased) because CQ1 (CQ2) is charged (discharged) by the resonant current iLr. The zero-voltage switching condition of power device Q2 is derived as.
i L m 2 , p e a k V H 2 2 C e q L m 2 + L r ,
where Ceq = CQ1 = CQ2. Based on the switching frequency, magnetizing inductance and turn-ratio, the maximum magnetizing current can be calculated as:
i L m 2 , p e a k = Δ i L m 2 2 n V L 4 L m 2 f s w ,
From the given dead time, switching frequency, and input and output voltages, the magnetizing inductance Lm2 is obtained as:
L m 2 t d n V L 8 f s w V H C e q ,
Mode 4 [t3 ~ t4]: At t3, vCQ2 = 0. Since iLr(t3) > 0, the antiparallel diode DQ2 is forward biased. Thus, Q2 will turn on at zero voltage switching. Due to iQ4(t3) < 0, Q4 turns on to reduce the conduction loss on Q4. In this mode, vab = −VH/2, vLm2 = −nVL/2, and iLm2 decreases. The current variation on Lm2 is ΔiLm2,4 = nVLΔt34/Lm2 where Δt34 is the time duration in mode 4. Lr and Cr are resonant with vab = −VH/2, vLm2 = −nVL and f r = 1 / 2 π C r L r . If fr > fsw, the next step of the circuit operation will go to mode 5. Otherwise, the circuit operation will go to mode 6.
Mode 5 [t4 ~ t5]: At time t4, iQ4 = 0 and synchronous switch Q4 turns off. The resonant inductor current iLr will flow through Q2, Cr, Lr, Lm2 and CH2. Lr, Cr and Lm2 are resonant with input voltage vab = −VH/2.
Mode 6 [t5 ~ Tsw + t0]: At t5, power device Q2 turns off. Due to iLr(t5) < 0, capacitor CQ1 (CQ2) is discharged (charged). The soft switching condition of power device Q1 is the same as power device Q2. The charge (discharge) time of CQ2 (CQ1) is sufficiently quick and can be ignored. At time Tsw + t0, vCQ1 = 0 and the circuit operations of the developed converter are completed.
Although there are several approaches [18,19,20,21] to generate square voltage waveforms on the ac side of the converter leg, fundamental frequency analysis [22] is the most useful approach to obtain voltage gain of the proposed circuit under different switching frequency. Based on the switching states of power devices, two square voltage signals are observed on high-voltage side vab and vLm2. Cr, Lr and Lm2 work as a circuit filter to eliminate harmonic signals. Therefore, vab and vLm2 can be treated as ac voltage’s only fundamental frequency to simplify the circuit analysis. The fundamental root mean square (rms) voltages vab,rms and vLm2,rms are calculated as 2 V H / π and 2 2 V L n / π . The primary-side fundamental resistance is obtained as R a c 2 = 8 n 2 R o , L / π 2 where Ro,L is load resistance on the low-voltage side. The equivalent circuit at the fundamental switching frequency under forward power transfer is shown in Figure 3a. Based on a resonant tank consisting of Cr, Lr, Lm2 and Rac2, the voltage gain GH2L(s) and |GH2L(s)| under different switching frequency are obtained as:
G H 2 L ( s ) = v L m 2 , r m s ( s ) v a b , r m s ( s ) = s L m 2 R a c 2 s L m 2 + R a c 2 s L r + 1 s C r + s L m 2 R a c 2 s L m 2 + R a c 2 ,
| G H 2 L ( F ) | = K 1 F 2 [ ( K 1 + 1 ) F 2 1 ] 2 + [ Q 1 K 1 F ( F 2 1 ) ] 2 ,
where Q 1 = L r / C r / R a c 2 , K1=Lm2/Lr, F = fsw/fr and f r = 1 / ( 2 π L r C r ) . Based on (5), the switching frequency is derived with the given high voltage value VH, low voltage value VL, inductor ratio K1 = Lm2/Lr and equivalent load resistance Rac2.

3.2. Reverse Power Flow

When the proposed converter is worked as backward power transfer to transfer power from VL to VH (Figure 3b), power devices Q3 and Q4 on the low-voltage side work as active switches to control primary-side voltage VH. For having the circuit characteristics of LLC resonant converter, ac switch S is ON so that Lm1 is connected between points a and b. Based on the amplitude of |iLr| and |iLm1|, the anti-parallel diodes DQ1 and DQ2 are ON or OFF and the quasi-square voltage waveform is generated on voltage vab. Likewise, a square waveform is also generated on the primary-side voltage vLm2 based on the ON/OFF state of Q3 and Q4. Under reverse power transfer operation, Lr, Cr and Lm1 are resonant and the input impedance from the low-voltage side should be an inductive load. Then, Q3 and Q4 can be operated under zero-voltage condition such that the switching loss is lessened. The key pulse-width modulation signals under backward power transfer operation are demonstrated in Figure 3b. The equivalent topological circuits corresponding to mode operations are demonstrated in Figure 5.
Mode 1 [t0 ~ t1]: The voltage on CQ3 is decreased to zero voltage at time t0. Since iQ3 < 0 and iLr > 0, the body diode DQ3 of MOSFET Q3 conducts so that MOSFET Q3 turns on after t0 to realize soft switching. In this mode, iLr(t0) + iLm1(t0) < 0, DQ1 is conducting, CH1 is charged by iDQ1, vab = VCH1 = VH/2, vLm2 = nVL, iLm2 increases with the slope nVL/Lm2 and iLm1 increases with the slope VH/(2Lm1). Lr and Cr are resonant. Power transfer is from VL to VH in this mode through components Q3, T, Lr, Cr and DQ1. If fsw < fr, the circuit action will go to mode 2. However, the circuit action will go to mode 3.
Mode 2 [t1 ~ t2]: If iDQ1(t1) = 0, then diode DQ1 is off. The resonant current iLr flows through components S, Cr, Lr, T and Lm2, the components Cr, Lr and Lm1 are resonant with vLm2 = nVL, and the resonant frequency is f p = 1 / 2 π C r ( L r + L m 1 ) < < f r .
Mode 3 [t2 ~ t3]: At t2, power device Q3 turns off. Since iQ3 > 0 and iQ4 < 0, CQ3 is charged and CQ4 is discharged. The zero-voltage switching condition of Q4 is obtained as:
( L m 1 + L r ) i L m 1 , p e a k 2 + L m 2 i L m 2 , p e a k 2 2 C Q , s V L 2 ,
where CQ,s = CQ3 = CQ4, i L m 2 , p e a k n V L / ( 4 L m 2 f s w ) and i L m 1 , p e a k V H / ( 8 L m 1 f s w ) . The time duration in this mode is calculated when vCQ4 is decreased to zero voltage.
Δ t 23 2 V L C Q , s n [ i L m 1 , p e a k + i L m 2 , p e a k ] = 16 L m 1 L m 2 f s w V L C Q , s n ( L m 2 V H + 2 n L m 1 V L ) t d ,
where td is a dead time.
Mode 4 [t3 ~ t4]: At time t3, vCQ4 = 0. Then, DQ4 becomes forward biased. Since iQ4(t3) is negative, Q4 can be turned on at this instant without turn-on switching loss. In this mode, DQ2 is forward biased, Q4 is turned on, vab = vLm1 = −VH/2, vLm2 = −nVL, and Cr and Lr are resonant. If fsw < fr, the next operating mode will go to mode 5. Otherwise, the next operating mode is mode 6.
Mode 5 [t4 ~ t5]: If fsw < fr, iDQ2 = 0 before active device Q4 turns off. At time t4, iDQ2 = 0 and DQ2 is reverse biased. Therefore, the resonant inductor current iLr flows through Lm1, Cr, Lr and T. Lm1, Cr and Lr are resonant under vLm2 = −nVL.
Mode 6 [t5 ~ Tsw + t0]: Q4 is turned off at t5. Then, CQ3 and CQ4 are discharged and charged, respectively. At time Tsw + t0, vCQ3 = 0. Then the circuit operation will go to mode 1 for next switching period.
The operation of the proposed converter at reverse power transfer is like the forward power transfer. Q3 and Q4 are controlled by frequency-mode operation. The resonant tank included Lr, Cr and Lm1 and is operated as a band-pass filter to eliminate harmonics. In Figure 3b, the input fundamental rms voltage v L m 2 , r m s = 2 2 n V L / π . The resonant tank includes Rac1, Lm1, Cr and Lr. The equivalent resistance R a c 1 = 2 R o , H / π 2 . The voltage gains G L 2 H ( s ) and | G L 2 H ( s ) | under reverse power transfer are calculated as:
G L 2 H ( s ) = v L m 1 , r m s ( s ) v L m 2 , r m s ( s ) = s L m 1 R a c 1 s L m 1 + R a c 1 1 s C r + s L r + s L m 1 R a c 1 s L m 1 + R a c 1 ,
| G L 2 H ( F ) | = K 2 F 2 [ ( K 2 + 1 ) F 2 1 ] 2 + [ Q 2 K 2 F ( F 2 1 ) ] 2 ,
where f r = 1 / ( 2 π L r C r ) , Q 2 = L r / C r / R a c 1 , K2 = Lm1/Lr and F = fsw/fr. Based on Equation (9), the necessary switching frequency fsw is calculated from the given parameters VH, VL, K2 = Lm1/Lr and Rac1.

4. Experimental Waveforms

In this section, a design procedure of the studied circuit is discussed and the experiments are demonstrated. For forward power operation, the high-side voltage VH = 350 V ~ 400 V and the low-side voltage VL = 48 V. For reverse power transfer, the low-voltage VL varies from 38 V to 52 V and VH = 400 V. The power rating Po,rated = 480 W. Based on Equations (5) and (9), the voltage transfer functions for both forward power operation and reverse power operation are alike. To simplify the circuit design, only the forward power transfer is discussed. The voltage gain |GH2L(s)| under VH = 400 V is set to one. Then, the turn-ratio n of power transformer T is calculated as n = | G H 2 L | × V H , max 2 V L , max = 1 × 400 2 × 52 3.85 . In this prototype, the selected primary turns and secondary turns are 23 and 6, respectively. According to turn-ratio n, the dc gains are derived under 48 V output voltage.
| G H 2 L | d c , min = 2 n V L , n o m V H , max = 2 × ( 23 / 6 ) × 48 400 0.92 ,
| G H 2 L | d c , max = 2 n V L , n o m V H , min = 2 × ( 23 / 6 ) × 48 350 1.05 ,
Since the maximum gain of |GH2L(s)| is 1.05, the select inductor ratio K1 and quality factor Q1 should be selected under the full load and minimum input voltage case. The larger K1 can reduce circulating current loss and the smaller K1 can increase voltage gain. Since the maximum voltage gain of |GH2L(s)| is 1.05, K1 = 13 is selected in the prototype to lessen the circulating current loss. The maximum gain of |GH2L(s)| under K1 = 13 and Q1 = 0.35 is close to 1.18. Since n = 23/6, Rac2 at rated power can be obtained as:
R a c 2 = 8 n 2 π 2 R o , L = 8 × ( 23 / 6 ) 2 3.14159 2 × 48 10 57.17 Ω ,
Since fr is selected as 100 kHz, Cr and Lr are calculated as C r = 1 / 2 π Q 1 f r R a c 2 79.5   nF and L r = 1 / ( 2 π f r ) 2 C r 31.86   μ H . The selected components are Cr = 78 nF, Lr = 32 µH and L m 2 = K 1 L r = 13 × 32 = 416   μ H . The secondary-side rms current reflected to the primary-side is obtained as I r m s , p = π I o 2 2 n 2.9   A . The minimum switching frequency of the prototype circuit is obtained as f s w , min = 1 / 2 π C r ( L r + L m 2 ) 27   kHz . The maximum rms magnetizing current occurs at minimum switching frequency fsw,min and can be expressed as I L m 2 , r m s = 1 2 3 n V L 4 f s w , min L m 2 1.18   A . The rms current of Lr is obtained as I L r , r m s = I L m 2 , r m s 2 + I r m s , p 2 3.13   A . The maximum peak voltage on capacitor Cr is derived as v C r , p e a k = 2 I L r , r m s 2 π f s w , min C r 334.5 V . The theoretical voltage ratings of Q1 ~ Q4 are vQ1,stress = vQ2,stress = 400 V and vQ3,stress = vQ4,stress = 104V. The rms switch currents are I Q 1 , r m s = I Q 2 , r m s = I L r , r m s / 2 2.21   A and I Q 3 , r m s = I Q 4 , r m s = n I sec , p / 2 7.85   A . Power devices Q1 and Q2 are implemented using IRG4PC40W with 600 V/20 A rating, and power devices Q3 and Q4 are implemented using IRFB4321PbF with 150 V/85 A rating. Two SiHG20N50C with 500 V/20 A rating with back-to-back connection is adopted to implement ac switch S. The selected inductor Lm1 = 224 µH means the inductor ratio K2 = Lm1/Lr = 7 at reverse power transfer condition. In the prototype circuit, the input and output capacitances are CH1 = CH2 = 180 µF/400 V and CL = 2200 µF/100 V.
Based on the circuit values calculated in design procedure, a prototype circuit was implemented, and the experiments are provided to verify the effectiveness of the developed circuit. Figure 6 gives the photograph of the proposed prototype. The test results of the developed converter operated at forward power transfer are shown in Figure 7, Figure 8, Figure 9 and Figure 10. Likewise, Figure 11, Figure 12, Figure 13 and Figure 14 show the test results under backward power transfer. Figure 7 gives the test results of the developed circuit under 100% load and VH = 350 V case. Since fsw is less than fr, the secondary-side currents are decreased to zero before active device is turned off. Similarly, Figure 8 illustrates the experimental results under 100% rated power and VH = 400 V case. It is clear that fsw (switching frequency) is close to fr (resonant frequency) so that iLr and vCr are close to sinusoidal waveforms. Figure 9 and Figure 10 demonstrate the test waveforms of the power devices Q1 and Q2 under different input voltage and load situations. It is observed that zero-voltage turn-on switching of Q1 and Q2 are achieved from 20 to 100% of rated power. The switching frequency at VH = 350 V case is less than the switching frequency at VH = 400 V case. For forward power transfer, the circuit efficiencies are 94.73% (90%), 94.8% (93.2%) and 93.9% (92.3%) at 20%, 50% and 100% rated power, respectively, under 400 V (350 V) input. The measured switching frequencies are 151.3 kHz (67.4 kHz), 114.3 kHz (60 kHz) and 97.6 kHz (52.85 kHz) at 20%, 50% and 100% rated power, respectively, under 400 V (350 V) input. Figure 11 and Figure 12 give the test results of main voltage and current waveforms under backward power transfer at input voltage VL = 38 V and 52 V cases. Based on test results, the switching frequencies fsw under these cases are all less than fr (resonant frequency). Therefore, the reverse recovery current loss on DQ1 and DQ2 is improved. Figure 13 and Figure 14 demonstrate the measured waveforms of power devices Q3 and Q4 at different load and voltage cases. The soft switching characteristics of Q3 and Q4 are realized from 20% of rated power. Based on test results shown in Figure 7, Figure 8, Figure 9, Figure 10, Figure 11, Figure 12, Figure 13 and Figure 14, the experimental waveforms are agreed with the theoretical waveforms in the system analysis. For backward power transfer, the circuit efficiencies are 88.2% (87.1%), 91.1% (90.4%) and 90.2% (90.1%) at 20%, 50% and 100% rated power, respectively, under 52V (38V) input. The measured switching frequencies are 72.5 kHz (62.8 kHz), 60.2 kHz (53.4 kHz) and 53.5 kHz (48.8 kHz) at 20%, 50% and 100% rated power, respectively, under 52 V (38 V) input. Because of low voltage and high current input at the low voltage side under backward power transfer, more conduction loss will be introduced on power switches at the low voltage side. Thus, the circuit efficiency under backward power operation is less than the circuit efficiency under forward power operation.

5. Conclusions

A bidirectional resonant converter is studied and implemented to achieve bidirectional power transfer capability. To achieve the dual symmetric resonant behavior for both forward power operation and backward power operation and reduce the circulating current loss under forward power transfer, an ac switch and a parallel inductor is used on the high voltage side. The input impedance of the proposed circuit is regulated with the frequency-modulation scheme. The soft switching of active devices is realized. The forward and backward power transfers have the same LLC circuit characteristics. The parallel inductor on the primary-side is disconnected under forward power transfer in order to improve the circulating current loss. Finally, experimental waveforms are provided to demonstrate the achievability of the developed converter. The main drawback of the proposed converter is more conduction loss on magnetizing inductor during the backward power transfer, because the low-side voltage will introduce a magnetizing current, and this is an additional power loss on low-side power devices and transformers. Therefore, the circuit efficiency at the backward power transfer is less than forward power transfer. In order to overcome low circuit efficiency at backward power flow in the proposed converter, the symmetric resonant circuit, such as CLLLC or CLLC, instead of using half-bridge or full-bridge circuit topology, may be researched and studied in future work.

Author Contributions

B.-R.L. designed the main parts of the project and was also responsible for writing the paper. Y.-C.H. built the prototype circuit and measured experimental waveforms.

Acknowledgments

This study is supported by the Ministry of Science and Technology, Taiwan, under contract MOST 107-2221-E-224-013.

Conflicts of Interest

The author declares no potential conflict of interest.

References

  1. Zhao, J.F.; Jiang, J.G.; Yang, X.W. AC-DC-DC isolated converter with bidirectional power flow capability. IET Power Electron. 2010, 3, 472–479. [Google Scholar] [CrossRef]
  2. Singh, A.K.; Pathak, M.K. Single-phase bidirectional ac/dc converter for plug-in electric vehicles with reduced conduction losses. IET Power Electron. 2018, 11, 140–148. [Google Scholar] [CrossRef]
  3. Prasanna, U.R.; Singh, A.K.; Rajashekara, K. Novel bidirectional single-phase single-stage isolated ac-dc converter with PFC for charging of electric vehicles. IEEE Trans. Transport. Electrif. 2017, 3, 536–544. [Google Scholar] [CrossRef]
  4. Gu, L.; Jin, K. A three-phase bidirectional ac/dc converter with Y-Δ controlled transformers. IEEE Trans. Power Electron. 2016, 31, 8115–8125. [Google Scholar]
  5. Yilmaz, M.; Krein, P.T. Review of battery charger topologies, charging power levels, and infrastructure for plug-in electric and hybrid vehicles. IEEE Trans. Power Electron. 2013, 28, 2151–2169. [Google Scholar] [CrossRef]
  6. Emadi, A.; Lee, Y.J.; Rajashekara, K. Power electronics and motor drives in electric, hybrid electric, and plug-in hybrid electric vehicles. IEEE Trans. Ind. Electron. 2008, 55, 2237–2245. [Google Scholar] [CrossRef]
  7. Chan, C.C.; Chau, K.T. An overview of power electronics in electric vehicles. IEEE Trans. Ind. Electron. 1997, 44, 3–13. [Google Scholar] [CrossRef] [Green Version]
  8. Mishimay, T.; Hiraki, E.; Nakaoka, M. A High Frequency-Link Bidirectional DC-DC Converter for Super Capacitor-Based Automotive Auxiliary Electric Power Systems. J. Power Electron. 2010, 10, 27–33. [Google Scholar] [CrossRef] [Green Version]
  9. Krismer, F.; Biela, J.; Kolar, J.W. A Comparative Evaluation of Isolated Bi-directional DC/DC Converters with Wide Input and Output Voltage Range. In Proceedings of the Conference Record of the 2005 Industry Applications Conference, Hong Kong, China, 2–6 October 2005; pp. 599–606. [Google Scholar]
  10. Lee, J.Y.; Jeong, Y.S.; Han, B.M. A two-stage isolated/bidirectional DC/DC converter with current ripple reduction technique. IEEE Trans. Ind. Electron. 2012, 59, 644–646. [Google Scholar] [CrossRef]
  11. Zhang, Y.; Gao, Y.; Li, J.; Sumner, M. Interleaved switched-capacitor bidirectional dc-dc converter with wide voltage-gain range for energy storage systems. IEEE Trans. Power Electron. 2018, 33, 3852–3869. [Google Scholar] [CrossRef]
  12. Mangu, B.; Akshatha, S.; Suryanarayana, D.; Fernandes, B.G. Grid-connected PV-wind-battery-based multi-input transformer-couple bidirectional dc-dc converter for household applications. IEEE J. Emerg. Sel. Top. Power Electron. 2016, 4, 1086–1095. [Google Scholar] [CrossRef]
  13. Shen, C.L.; Shen, Y.S.; Chiu, P.C.; Liang, T.C. Isolated bidirectional converter with minimum active switches for high-voltage ratio achievement and micro-grid applications. IET Proc. Power Electron. 2017, 10, 2208–2216. [Google Scholar] [CrossRef]
  14. Pledl, G.; Tauer, M.; Buecherl, D. Theory of operation, design procedure and simulation of a bidirectional LLC resonant converter for vehicular applications. In Proceedings of the 2010 IEEE Vehicle Power and Propulsion Conference, Lille, France, 1–3 September 2010; pp. 1–5. [Google Scholar]
  15. Tan, K.; Yu, R.; Guo, S.; Huang, A.Q. Optimal design methodology of bidirectional LLC resonant DC/DC converter for solid state transformer application. In Proceedings of the IECON 2014—40th Annual Conference of the IEEE Industrial Electronics Society, Dallas, TX, USA, 29 October–1 November 2014; pp. 1657–1664. [Google Scholar]
  16. Kim, E.S.; Park, J.H.; Jeon, Y.S.; Kong, Y.S.; Lee, S.M.; Kim, K. Bidirectional secondary LLC resonant converter using auxiliary switches and inductor. In Proceedings of the 2014 IEEE Applied Power Electronics Conference and Exposition (APEC 2014), Fort Worth, TX, USA, 16–20 March 2014; pp. 1941–1947. [Google Scholar]
  17. Jiang, T.; Zhang, J.; Wu, X.; Sheng, K.; Wang, Y. A bidirectional LLC resonant Converter with automatic forward and backward mode transition. IEEE Trans. Power Electron. 2015, 30, 757–770. [Google Scholar] [CrossRef]
  18. Lin, B.R.; Chu, C.W. DC/DC converter with parallel input and parallel output with shared power switches and rectifier diodes. IET Proc. Power Electron. 2015, 8, 814–821. [Google Scholar] [CrossRef]
  19. Matko, V.; Milanović, M. Temperature-compensated capacitance-frequency converter with high resolution. Sens. Actuators A Phys. 2014, 220, 262–269. [Google Scholar] [CrossRef]
  20. Azevedo, R.G.; Huang, W.; O’Reilly, O.M.; Pisano, A.P. Dual-mode temperature compensation for a comb-driven MEMS resonant strain gauge. Sens. Actuators A Phys. 2008, 144, 374–380. [Google Scholar] [CrossRef]
  21. Matko, V. Next generation AT-cut quartz crystal sensing devices. Sensors 2011, 11, 4474–4482. [Google Scholar] [CrossRef] [PubMed]
  22. Steigerwald, R. A comparison of half bridge resonant converter topologies. IEEE Trans. Power Electron. 1988, 3, 135–144. [Google Scholar] [CrossRef]
Figure 1. Circuit diagram of conventional resonant converter with (a) center-tapped rectifier on the secondary-side (b) with synchronous rectifier on the secondary-side.
Figure 1. Circuit diagram of conventional resonant converter with (a) center-tapped rectifier on the secondary-side (b) with synchronous rectifier on the secondary-side.
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Figure 2. Proposed circuit (a) circuit diagram (b) forward power transfer (c) reverse power transfer.
Figure 2. Proposed circuit (a) circuit diagram (b) forward power transfer (c) reverse power transfer.
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Figure 3. Resonant tank of the studied circuit (a) forward power transfer from VH to VL (b) backward power transfer from VL to VH.
Figure 3. Resonant tank of the studied circuit (a) forward power transfer from VH to VL (b) backward power transfer from VL to VH.
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Figure 4. Equivalent topological circuits for each mode operation under forward power transfer (a) mode 1 (b) mode 2 (c) mode 3 (d) mode 4 (e) mode 5 (f) mode 6.
Figure 4. Equivalent topological circuits for each mode operation under forward power transfer (a) mode 1 (b) mode 2 (c) mode 3 (d) mode 4 (e) mode 5 (f) mode 6.
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Figure 5. Equivalent topological circuits at reverse power transfer (a) mode 1 (b) mode 2 (c) mode 3 (d) mode 4 (e) mode 5 (f) mode 6.
Figure 5. Equivalent topological circuits at reverse power transfer (a) mode 1 (b) mode 2 (c) mode 3 (d) mode 4 (e) mode 5 (f) mode 6.
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Figure 6. Photograph of the proposed prototype.
Figure 6. Photograph of the proposed prototype.
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Figure 7. Test results under forward power transfer and full load with VH = 350 V (a) vQ1,g, vQ2,g and iLr [vQ1,g, vQ2,g: 10 V/div; iLr: 5 A/div; time: 4 µs/div] (b) vQ1,g, vCr and vab [vQ1,g: 10 V/div; vCr, vab: 200 V/div; time: 4 µs/div] (c) vQ1,g, vQ2,g, −iQ3 and −iQ4 [vQ1,g, vQ2,g: 10V/div; −iQ3, −iQ4,g: 25 A/div; time: 4 µs/div].
Figure 7. Test results under forward power transfer and full load with VH = 350 V (a) vQ1,g, vQ2,g and iLr [vQ1,g, vQ2,g: 10 V/div; iLr: 5 A/div; time: 4 µs/div] (b) vQ1,g, vCr and vab [vQ1,g: 10 V/div; vCr, vab: 200 V/div; time: 4 µs/div] (c) vQ1,g, vQ2,g, −iQ3 and −iQ4 [vQ1,g, vQ2,g: 10V/div; −iQ3, −iQ4,g: 25 A/div; time: 4 µs/div].
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Figure 8. Test results under forward power transfer and full load with VH = 400V (a) vQ1,g, vQ2,g and iLr [vQ1,g, vQ2,g: 10 V/div; iLr: 5 A/div; time: 4 µs/div] (b) vQ1,g, vCr and vab [vQ1,g: 10 V/div; vCr, vab: 200 V/div; time: 4 µs/div] (c) vQ1,g, vQ2,g, −iQ3 and −iQ4 [vQ1,g, vQ2,g: 10 V/div; −iQ3, −iQ4,g: 25 A/div; time: 4 µs/div].
Figure 8. Test results under forward power transfer and full load with VH = 400V (a) vQ1,g, vQ2,g and iLr [vQ1,g, vQ2,g: 10 V/div; iLr: 5 A/div; time: 4 µs/div] (b) vQ1,g, vCr and vab [vQ1,g: 10 V/div; vCr, vab: 200 V/div; time: 4 µs/div] (c) vQ1,g, vQ2,g, −iQ3 and −iQ4 [vQ1,g, vQ2,g: 10 V/div; −iQ3, −iQ4,g: 25 A/div; time: 4 µs/div].
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Figure 9. Test results of Q1 under (a) VH = 350 V and 20% load [vQ1,g: 10 V/div; vQ1,d: 200 V/div; iQ1: 2 A/div; time: 4 µs/div] (b) VH = 350 V and 100% load [vQ1,g: 10 V/div; vQ1,d: 200 V/div; iQ1: 5 A/div; time: 4 µs/div] (c) VH = 400 V and 20% load [vQ1,g: 10 V/div; vQ1,d: 200 V/div; iQ1: 2 A/div; time: 4 µs/div] (d) VH = 400 V and 100% load [vQ1,g: 10 V/div; vQ1,d: 200 V/div; iQ1: 5 A/div; time: 4 µs/div].
Figure 9. Test results of Q1 under (a) VH = 350 V and 20% load [vQ1,g: 10 V/div; vQ1,d: 200 V/div; iQ1: 2 A/div; time: 4 µs/div] (b) VH = 350 V and 100% load [vQ1,g: 10 V/div; vQ1,d: 200 V/div; iQ1: 5 A/div; time: 4 µs/div] (c) VH = 400 V and 20% load [vQ1,g: 10 V/div; vQ1,d: 200 V/div; iQ1: 2 A/div; time: 4 µs/div] (d) VH = 400 V and 100% load [vQ1,g: 10 V/div; vQ1,d: 200 V/div; iQ1: 5 A/div; time: 4 µs/div].
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Figure 10. Test results of Q2 under (a) VH = 350V and 20% load [vQ2,g: 10 V/div; vQ2,d: 200 V/div; iQ2: 2 A/div; time: 4 µs/div] (b) VH = 350 V and 100% load [vQ2,g: 10 V/div; vQ2,d: 200 V/div; iQ2: 5 A/div; time: 4 µs/div] (c) VH = 400V and 20% load [vQ2,g: 10 V/div; vQ2,d: 200 V/div; iQ2: 2 A/div; time: 4 µs/div] (d) VH = 400 V and 100% load [vQ2,g: 10 V/div; vQ2,d: 200 V/div; iQ2: 5 A/div; time: 4 µs/div].
Figure 10. Test results of Q2 under (a) VH = 350V and 20% load [vQ2,g: 10 V/div; vQ2,d: 200 V/div; iQ2: 2 A/div; time: 4 µs/div] (b) VH = 350 V and 100% load [vQ2,g: 10 V/div; vQ2,d: 200 V/div; iQ2: 5 A/div; time: 4 µs/div] (c) VH = 400V and 20% load [vQ2,g: 10 V/div; vQ2,d: 200 V/div; iQ2: 2 A/div; time: 4 µs/div] (d) VH = 400 V and 100% load [vQ2,g: 10 V/div; vQ2,d: 200 V/div; iQ2: 5 A/div; time: 4 µs/div].
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Figure 11. Test results under backward power transfer and full load with VL = 38 V (a) vQ3,g, vQ4,g and iLm1 [vQ3, g, vQ4, g: 10 V/div; iLm1: 5 A/div; time: 4 µs/div] (b) vQ3,g, VH, vCr and −iLr [vQ3,g: 10 V/div; VH, vCr: 500 V/div; −iLr: 10 A/div; time: 4 µs/div] (c) vQ3,g, iDQ1 and iDQ2 [vQ3,g: 10 V/div; iDQ1, iDQ2: 5 A/div; time: 4 µs/div].
Figure 11. Test results under backward power transfer and full load with VL = 38 V (a) vQ3,g, vQ4,g and iLm1 [vQ3, g, vQ4, g: 10 V/div; iLm1: 5 A/div; time: 4 µs/div] (b) vQ3,g, VH, vCr and −iLr [vQ3,g: 10 V/div; VH, vCr: 500 V/div; −iLr: 10 A/div; time: 4 µs/div] (c) vQ3,g, iDQ1 and iDQ2 [vQ3,g: 10 V/div; iDQ1, iDQ2: 5 A/div; time: 4 µs/div].
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Figure 12. Test results under backward power transfer and full load with VL = 52 V (a) vQ3,g, vQ4,g and iLm1 [vQ3,g, vQ4,g: 10 V/div; iLm1: 5 A/div; time: 4 µs/div] (b) vQ3,g, VH, vCr and −iLr [vQ3,g: 10 V/div; VH, vCr: 500 V/div; −iLr: 10 A/div; time: 4 µs/div] (c) vQ3,g, iDQ1 and iDQ2 [vQ3,g: 10 V/div; iDQ1, iDQ2: 5 A/div; time: 4 µs/div].
Figure 12. Test results under backward power transfer and full load with VL = 52 V (a) vQ3,g, vQ4,g and iLm1 [vQ3,g, vQ4,g: 10 V/div; iLm1: 5 A/div; time: 4 µs/div] (b) vQ3,g, VH, vCr and −iLr [vQ3,g: 10 V/div; VH, vCr: 500 V/div; −iLr: 10 A/div; time: 4 µs/div] (c) vQ3,g, iDQ1 and iDQ2 [vQ3,g: 10 V/div; iDQ1, iDQ2: 5 A/div; time: 4 µs/div].
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Figure 13. Test results of the power device Q3 under backward power transfer (a) VL = 38 V and 20% load (b) VL = 380 V and 100% load (c) VL = 52 V and 20% load (d) VL = 52 V and 100% load [vQ3,g: 10 V/div; vQ3,d: 100 V; iQ3: 25 A/div; time: 4 µs/div].
Figure 13. Test results of the power device Q3 under backward power transfer (a) VL = 38 V and 20% load (b) VL = 380 V and 100% load (c) VL = 52 V and 20% load (d) VL = 52 V and 100% load [vQ3,g: 10 V/div; vQ3,d: 100 V; iQ3: 25 A/div; time: 4 µs/div].
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Figure 14. Test results of the power device Q4 under backward power transfer (a) VL = 38 V and 20% load (b) VL = 38 V and 100% load (c) VL = 52 V and 20% load (d) VL = 52 V and 100% load [vQ4,g: 10 V/div; vQ4,d: 100 V; iQ4: 25 A/div; time: 4 µs/div].
Figure 14. Test results of the power device Q4 under backward power transfer (a) VL = 38 V and 20% load (b) VL = 38 V and 100% load (c) VL = 52 V and 20% load (d) VL = 52 V and 100% load [vQ4,g: 10 V/div; vQ4,d: 100 V; iQ4: 25 A/div; time: 4 µs/div].
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Table 1. Circuit topologies and component counts between the proposed converter and the other bidirectional dc–dc converters.
Table 1. Circuit topologies and component counts between the proposed converter and the other bidirectional dc–dc converters.
Primary-SideSecondary-SideComponent CountsControl Scheme
Proposed converterHalf-bridge circuitCenter-tapped circuit5 switches, 3 magnetic components, 1 resonant capacitorFrequency control
Circuit topology in Reference [8]Full-bridge circuitCenter-tapped circuit6 switches, 2 magnetic componentsDuty cycle control
Circuit topology in Reference [9]Full-bridge circuitFull-bridge circuit8 switches, 2 magnetic componentsDuty cycle control
Circuit topology in Reference [10]Half-bridge circuitHalf-bridge circuit6 switches, 3 magnetic components, 1 resonant capacitorFrequency control
Circuit topology in Reference [14]Full-bridge circuitFull-bridge circuit8 switches, 2 magnetic components, 1 resonant capacitorFrequency control
Circuit topology in Reference [16]Full-bridge circuitFull-bridge circuit8 switches, 3 magnetic components, 2 resonant capacitorsFrequency control

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Lin, B.-R.; Huang, Y.-C. Bidirectional DC Converter with Frequency Control: Analysis and Implementation. Energies 2018, 11, 2450. https://doi.org/10.3390/en11092450

AMA Style

Lin B-R, Huang Y-C. Bidirectional DC Converter with Frequency Control: Analysis and Implementation. Energies. 2018; 11(9):2450. https://doi.org/10.3390/en11092450

Chicago/Turabian Style

Lin, Bor-Ren, and Yen-Chieh Huang. 2018. "Bidirectional DC Converter with Frequency Control: Analysis and Implementation" Energies 11, no. 9: 2450. https://doi.org/10.3390/en11092450

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