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Sensors 2019, 19(8), 1785; https://doi.org/10.3390/s19081785

A GaN-Based Wireless Monitoring System for High-Temperature Applications

1
Department of Electrical Engineering, Polytechnique Montreal, QC H3T 1J4, Canada
2
Microelectronics Department, Electronics Research Institute, Cairo 12622, Egypt
3
School of Engineering, Westlake University, Hangzhou 310024, China
4
Institute of Advanced Study, Westlake Institute for Advanced Study, Hangzhou 310024, China
*
Author to whom correspondence should be addressed.
Received: 5 March 2019 / Revised: 11 April 2019 / Accepted: 12 April 2019 / Published: 14 April 2019
(This article belongs to the Special Issue Advanced Interface Circuits and Systems for Smart Sensors)
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Abstract

A fully-integrated data transmission system based on gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices is proposed. This system targets high-temperature (HT) applications, especially those involving pressure and temperature sensors for aerospace in which the environmental temperature exceeds 350 °C. The presented system includes a front-end amplifying the sensed signal (gain of 50 V/V), followed by a novel analog-to-digital converter driving a modulator exploiting the load-shift keying technique. An oscillation frequency of 1.5 MHz is used to ensure a robust wireless transmission through metallic-based barriers. To retrieve the data, a new demodulator architecture based on digital circuits is proposed. A 1 V amplitude difference can be detected between a high-amplitude (data-on) and a low-amplitude (data-off) of the received modulated signal. Two high-voltage supply levels (+14 V and −14 V) are required to operate the circuits. The layout of the proposed system was completed in a chip occupying 10.8 mm2. The HT characterization and modeling of integrated GaN devices and passive components are performed to ensure the reliability of simulation results. The performance of the various proposed building blocks, as well as the whole system, have been validated by simulation over the projected wide operating temperature range (25–350 °C). View Full-Text
Keywords: high-temperature applications; wireless data transmission; GaN HEMT; integrated circuits; harsh environment high-temperature applications; wireless data transmission; GaN HEMT; integrated circuits; harsh environment
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Hassan, A.; Ali, M.; Trigui, A.; Savaria, Y.; Sawan, M. A GaN-Based Wireless Monitoring System for High-Temperature Applications. Sensors 2019, 19, 1785.

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