Next Article in Journal
Experimental Setup and Measuring System to Study Solitary Wave Interaction with Rigid Emergent Vegetation
Previous Article in Journal
Signal in Space Error and Ephemeris Validity Time Evaluation of Milena and Doresa Galileo Satellites
Article Menu
Issue 8 (April-2) cover image

Export Article

Open AccessArticle

A GaN-Based Wireless Monitoring System for High-Temperature Applications

Department of Electrical Engineering, Polytechnique Montreal, QC H3T 1J4, Canada
Microelectronics Department, Electronics Research Institute, Cairo 12622, Egypt
School of Engineering, Westlake University, Hangzhou 310024, China
Institute of Advanced Study, Westlake Institute for Advanced Study, Hangzhou 310024, China
Author to whom correspondence should be addressed.
Sensors 2019, 19(8), 1785;
Received: 5 March 2019 / Revised: 11 April 2019 / Accepted: 12 April 2019 / Published: 14 April 2019
(This article belongs to the Special Issue Advanced Interface Circuits and Systems for Smart Sensors)
PDF [8784 KB, uploaded 14 April 2019]


A fully-integrated data transmission system based on gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices is proposed. This system targets high-temperature (HT) applications, especially those involving pressure and temperature sensors for aerospace in which the environmental temperature exceeds 350 °C. The presented system includes a front-end amplifying the sensed signal (gain of 50 V/V), followed by a novel analog-to-digital converter driving a modulator exploiting the load-shift keying technique. An oscillation frequency of 1.5 MHz is used to ensure a robust wireless transmission through metallic-based barriers. To retrieve the data, a new demodulator architecture based on digital circuits is proposed. A 1 V amplitude difference can be detected between a high-amplitude (data-on) and a low-amplitude (data-off) of the received modulated signal. Two high-voltage supply levels (+14 V and −14 V) are required to operate the circuits. The layout of the proposed system was completed in a chip occupying 10.8 mm2. The HT characterization and modeling of integrated GaN devices and passive components are performed to ensure the reliability of simulation results. The performance of the various proposed building blocks, as well as the whole system, have been validated by simulation over the projected wide operating temperature range (25–350 °C). View Full-Text
Keywords: high-temperature applications; wireless data transmission; GaN HEMT; integrated circuits; harsh environment high-temperature applications; wireless data transmission; GaN HEMT; integrated circuits; harsh environment

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Hassan, A.; Ali, M.; Trigui, A.; Savaria, Y.; Sawan, M. A GaN-Based Wireless Monitoring System for High-Temperature Applications. Sensors 2019, 19, 1785.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top