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Molecules 2018, 23(6), 1373; https://doi.org/10.3390/molecules23061373

Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron

1
School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China
2
Guangdong Juhua Printed Display Technology Co. Ltd., Guangzhou 510006, China
3
School of Materials and Energy, Guangzhou University of Technology, Guangzhou 510006, China
4
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
5
LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
*
Authors to whom correspondence should be addressed.
Received: 30 April 2018 / Revised: 31 May 2018 / Accepted: 5 June 2018 / Published: 6 June 2018
(This article belongs to the Section Inorganic Chemistry)
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Abstract

For the first time, compounds with lanthanum from the main family element Boron (LaBx) were investigated as an active layer for thin-film transistors (TFTs). Detailed studies showed that the room-temperature fabricated LaBx thin film was in the crystalline state with a relatively narrow optical band gap of 2.28 eV. The atom ration of La/B was related to the working pressure during the sputtering process and the atom ration of La/B increased with the increase of the working pressure, which will result in the freer electrons in the LaBx thin film. LaBx-TFT without any intentionally annealing steps exhibited a saturation mobility of 0.44 cm2·V−1·s−1, which is a subthreshold swing (SS) of 0.26 V/decade and a Ion/Ioff ratio larger than 104. The room-temperature process is attractive for its compatibility with almost all kinds of flexible substrates and the LaBx semiconductor may be a new choice for the channel materials in TFTs. View Full-Text
Keywords: LaBx; thin film transistors; low temperature; field effect; flexible LaBx; thin film transistors; low temperature; field effect; flexible
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Xiao, P.; Huang, J.; Dong, T.; Xie, J.; Yuan, J.; Luo, D.; Liu, B. Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron. Molecules 2018, 23, 1373.

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