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Molecules 2018, 23(6), 1373;

Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron

School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China
Guangdong Juhua Printed Display Technology Co. Ltd., Guangzhou 510006, China
School of Materials and Energy, Guangzhou University of Technology, Guangzhou 510006, China
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
Authors to whom correspondence should be addressed.
Received: 30 April 2018 / Revised: 31 May 2018 / Accepted: 5 June 2018 / Published: 6 June 2018
(This article belongs to the Section Inorganic Chemistry)
Full-Text   |   PDF [1023 KB, uploaded 6 June 2018]   |  


For the first time, compounds with lanthanum from the main family element Boron (LaBx) were investigated as an active layer for thin-film transistors (TFTs). Detailed studies showed that the room-temperature fabricated LaBx thin film was in the crystalline state with a relatively narrow optical band gap of 2.28 eV. The atom ration of La/B was related to the working pressure during the sputtering process and the atom ration of La/B increased with the increase of the working pressure, which will result in the freer electrons in the LaBx thin film. LaBx-TFT without any intentionally annealing steps exhibited a saturation mobility of 0.44 cm2·V−1·s−1, which is a subthreshold swing (SS) of 0.26 V/decade and a Ion/Ioff ratio larger than 104. The room-temperature process is attractive for its compatibility with almost all kinds of flexible substrates and the LaBx semiconductor may be a new choice for the channel materials in TFTs. View Full-Text
Keywords: LaBx; thin film transistors; low temperature; field effect; flexible LaBx; thin film transistors; low temperature; field effect; flexible

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Xiao, P.; Huang, J.; Dong, T.; Xie, J.; Yuan, J.; Luo, D.; Liu, B. Room-Temperature Fabricated Thin-Film Transistors Based on Compounds with Lanthanum and Main Family Element Boron. Molecules 2018, 23, 1373.

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