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Molecules 2016, 21(2), 210;

Morphology and N2 Permeance of Sputtered Pd-Ag Ultra-Thin Film Membranes

Energy and Environment Division, TECNALIA, Mikeletegi Pasealekua 2, 20009 San Sebastián-Donostia, Spain
Chemical Process Intensification, Department of Chemical Engineering and Chemistry, Eindhoven University of Technology, De Rondom 70 5612 AZ Eindhoven, The Netherlands
Authors to whom correspondence should be addressed.
Received: 23 December 2015 / Revised: 25 January 2016 / Accepted: 2 February 2016 / Published: 10 February 2016
(This article belongs to the Special Issue Membrane Catalysis)
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The influence of the temperature during the growth of Pd-Ag films by PVD magnetron sputtering onto polished silicon wafers was studied in order to avoid the effect of the support roughness on the layer growth. The surfaces of the Pd-Ag membrane films were analyzed by atomic force microscopy (AFM), and the results indicate an increase of the grain size from 120 to 250–270 nm and film surface roughness from 4–5 to 10–12 nm when increasing the temperature from around 360–510 K. After selecting the conditions for obtaining the smallest grain size onto silicon wafer, thin Pd-Ag (0.5–2-µm thick) films were deposited onto different types of porous supports to study the influence of the porous support, layer thickness and target power on the selective layer microstructure and membrane properties. The Pd-Ag layers deposited onto ZrO2 3-nm top layer supports (smallest pore size among all tested) present high N2 permeance in the order of 10−6 mol·m−2·s−1·Pa−1 at room temperature. View Full-Text
Keywords: palladium-silver alloy; PVD magnetron sputtering; ultra-thin film; H2 separation; film growth mechanisms palladium-silver alloy; PVD magnetron sputtering; ultra-thin film; H2 separation; film growth mechanisms

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Fernandez, E.; Sanchez-Garcia, J.A.; Viviente, J.L.; van Sint Annaland, M.; Gallucci, F.; Tanaka, D.A.P. Morphology and N2 Permeance of Sputtered Pd-Ag Ultra-Thin Film Membranes. Molecules 2016, 21, 210.

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