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Keywords = vertical field-effect transistor (VFET)

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13 pages, 3852 KB  
Article
Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure
by Huolin Huang, Feiyu Li, Zhonghao Sun, Nan Sun, Feng Zhang, Yaqing Cao, Hui Zhang and Pengcheng Tao
Electronics 2019, 8(2), 241; https://doi.org/10.3390/electronics8020241 - 20 Feb 2019
Cited by 8 | Viewed by 6367
Abstract
A gallium nitride (GaN) semiconductor vertical field-effect transistor (VFET) has several attractive advantages such as high power density capability and small device size. Currently, some of the main issues hindering its development include the realization of normally off operation and the improvement of [...] Read more.
A gallium nitride (GaN) semiconductor vertical field-effect transistor (VFET) has several attractive advantages such as high power density capability and small device size. Currently, some of the main issues hindering its development include the realization of normally off operation and the improvement of high breakdown voltage (BV) characteristics. In this work, a trenched-gate scheme is employed to realize the normally off VFET. Meanwhile, an additional back current blocking layer (BCBL) is proposed and inserted into the GaN normally off VFET to improve the device performance. The electrical characteristics of the proposed device (called BCBL-VFET) are investigated systematically and the structural parameters are optimized through theoretical calculations and TCAD simulations. We demonstrate that the BCBL-VFET exhibits a normally off operation with a large positive threshold voltage of 3.5 V and an obviously increased BV of 1800 V owing to the uniform electric field distribution achieved around the gate region. However, the device only shows a small degradation of on-resistance (RON). The proposed scheme provides a useful reference for engineers in device fabrication work and will be promising for the applications of power electronics. Full article
(This article belongs to the Special Issue Nanoelectronic Materials, Devices and Modeling)
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