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Keywords = variable junction leakage (VJL)

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19 pages, 12708 KiB  
Article
Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors
by Calvin Yi-Ping Chao, Shang-Fu Yeh, Meng-Hsu Wu, Kuo-Yu Chou, Honyih Tu, Chih-Lin Lee, Chin Yin, Philippe Paillet and Vincent Goiffon
Sensors 2019, 19(24), 5447; https://doi.org/10.3390/s19245447 - 10 Dec 2019
Cited by 15 | Viewed by 7431
Abstract
In this paper we present a systematic approach to sort out different types of random telegraph noises (RTN) in CMOS image sensors (CIS) by examining their dependencies on the transfer gate off-voltage, the reset gate off-voltage, the photodiode integration time, and the sense [...] Read more.
In this paper we present a systematic approach to sort out different types of random telegraph noises (RTN) in CMOS image sensors (CIS) by examining their dependencies on the transfer gate off-voltage, the reset gate off-voltage, the photodiode integration time, and the sense node charge retention time. Besides the well-known source follower RTN, we have identified the RTN caused by varying photodiode dark current, transfer-gate and reset-gate induced sense node leakage. These four types of RTN and the dark signal shot noises dominate the noise distribution tails of CIS and non-CIS chips under test, either with or without X-ray irradiation. The effect of correlated multiple sampling (CMS) on noise reduction is studied and a theoretical model is developed to account for the measurement results. Full article
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