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Gallium nitride (GaN), as the core material of third-generation semiconductors, has important applications in high-temperature, high-frequency, and high-power devices, but its polishing process faces many challenges. In this work, a multifield synergistic material removal model is established to study the material removal behaviour by ultrasonic magnetorheological chemical compound polishing (UMCP) of gallium nitride wafers, and the polishing processing under different polishing solution compositions and processing conditions is used to examine the effects of the ultrasonic, chemical, and mechanical effects on the material removal rate. The results show that mechanical removal dominates during UMCP, the chemical enhancement is slightly greater than the ultrasonic action, and the synergistic interaction between the range of factors promotes better removal of the GaN materials. The percentage of mechanical removal by abrasives is about 25% to 44.63%, the mechanical removal by magnetorheological effect polishing pads is about 14.66% to 23.94%, the removal due to chemical action is about 15.52% to 23.41%, the removal due to ultrasonic action is about 11.73% to 14.66%, and the percentage of interactive removal is 6.47% to 14.36%. The abrasive composition significantly enhances the mechanical removal effect, and a higher abrasive concentration correlates to a stronger mechanical removal effect. The concentration of hydrogen peroxide has a superior effect on the chemical reaction, and too high or too low a concentration of hydrogen peroxide weakens the chemical action effect. The results of the study can provide a basis for further research on the material removal mechanism of the GaN UMCP process. Full article