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Keywords = triple material gate

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17 pages, 10868 KiB  
Article
Investigation of Channel Mobility Enhancement Techniques Using Si/SiGe/GeSn Materials in Orthogonally Oriented Selective Buried Triple Gate Vertical Power MOSFET: Design and Performance Analysis
by M. Ejaz Aslam Lodhi, Abdul Quaiyum Ansari, Sajad A. Loan, Shabana Urooj and Nidal Nasser
Micromachines 2025, 16(4), 452; https://doi.org/10.3390/mi16040452 - 11 Apr 2025
Viewed by 594
Abstract
The performance of the Si MOSFET is suppressed when the channel loses its control through the gate. This paper introduces a new and novel high-channel conducting orthogonally oriented selective buried triple gate vertical power MOSFET technology to study the channel behavior compared with [...] Read more.
The performance of the Si MOSFET is suppressed when the channel loses its control through the gate. This paper introduces a new and novel high-channel conducting orthogonally oriented selective buried triple gate vertical power MOSFET technology to study the channel behavior compared with the conventional Si power MOSFET. Our paper investigates the performance of the proposed selective buried triple gate power MOSFET by using different channel materials (SiGe/GeSn over Si) to compare with the conventional Si MOSFET. Our 2D Silvaco simulation output significantly improves device on-current, ON-resistance, channel electron mobility, transconductance, and enhancement in various parameters governing power MOSFET. The unique design of our proposed triple gate gives very high channel mobility of 880 cm2/V·s, which we believe to be significant in the triple gate power MOSFET domain. The results show that our optimized triple-gate device achieves an ultra-low specific ON-resistance of 0.31 mΩ·cm², improving Balliga’s FOM1 by 411.61% and FOM2 by 98.704%. This makes it suitable for high-speed and switching devices, compatible with various high-mobility channel materials, and well-suited for future CMOS applications. Full article
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21 pages, 20950 KiB  
Article
Modeling and Simulation of a TFET-Based Label-Free Biosensor with Enhanced Sensitivity
by Sagarika Choudhury, Krishna Lal Baishnab, Koushik Guha, Zoran Jakšić, Olga Jakšić and Jacopo Iannacci
Chemosensors 2023, 11(5), 312; https://doi.org/10.3390/chemosensors11050312 - 22 May 2023
Cited by 17 | Viewed by 3666
Abstract
This study discusses the use of a triple material gate (TMG) junctionless tunnel field-effect transistor (JLTFET) as a biosensor to identify different protein molecules. Among the plethora of existing types of biosensors, FET/TFET-based devices are fully compatible with conventional integrated circuits. JLTFETs are [...] Read more.
This study discusses the use of a triple material gate (TMG) junctionless tunnel field-effect transistor (JLTFET) as a biosensor to identify different protein molecules. Among the plethora of existing types of biosensors, FET/TFET-based devices are fully compatible with conventional integrated circuits. JLTFETs are preferred over TFETs and JLFETs because of their ease of fabrication and superior biosensing performance. Biomolecules are trapped by cavities etched across the gates. An analytical mathematical model of a TMG asymmetrical hetero-dielectric JLTFET biosensor is derived here for the first time. The TCAD simulator is used to examine the performance of a dielectrically modulated label-free biosensor. The voltage and current sensitivity of the device and the effects of the cavity size, bioanalyte electric charge, fill factor, and location on the performance of the biosensor are also investigated. The relative current sensitivity of the biosensor is found to be about 1013. Besides showing an enhanced sensitivity compared with other FET- and TFET-based biosensors, the device proves itself convenient for low-power applications, thus opening up numerous directions for future research and applications. Full article
(This article belongs to the Special Issue State-of-the-Art (Bio)chemical Sensors—Celebrating 10th Anniversary)
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12 pages, 3850 KiB  
Article
Characterization of Partial Discharge Activities in WBG Power Converters under Low-Pressure Condition
by Moein Borghei and Mona Ghassemi
Energies 2021, 14(17), 5394; https://doi.org/10.3390/en14175394 - 30 Aug 2021
Cited by 14 | Viewed by 2587
Abstract
Many sectors, such as transportation systems, are undergoing rapid electrification due to the need for the mitigation of CO2 emissions. To ensure safe and reliable operation, the electrical equipment must be able to work under various environmental conditions. At high altitudes, the low [...] Read more.
Many sectors, such as transportation systems, are undergoing rapid electrification due to the need for the mitigation of CO2 emissions. To ensure safe and reliable operation, the electrical equipment must be able to work under various environmental conditions. At high altitudes, the low pressure can adversely affect the health of insulating materials of electrical systems in electric aircraft. A well-known, primary aging mechanism in dielectrics is partial discharge (PD). This study targets internal PD evaluation in an insulated-gate bipolar transistor (IGBT) module under low-pressure conditions. The estimation of electric field distribution is conducted through 3D finite element analysis (FEA) using COMSOL Multiphysics®. The procedure of PD detection and transient modeling is performed in MATLAB for two pressure levels (atmospheric and half-atmospheric). The case study is the IGBT module with a void or two voids in the proximity of triple joints. The single-void case demonstrates that at half-atmospheric pressure, the intensity of discharges per voltage cycle increases by more than 40% compared to atmospheric pressure. The double-void case further shows that a void that is harmless at sea level can turn into an additional source of aging and couple with the other voids to escalate PD intensity by a factor of two or more. Full article
(This article belongs to the Special Issue Dielectric and Electrical Insulation Measurements)
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