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Keywords = quantum well micropillar array

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11 pages, 2910 KB  
Article
Strain Relaxation Effect on the Peak Wavelength of Blue InGaN/GaN Multi-Quantum Well Micro-LEDs
by Chaoqiang Zhang, Ke Gao, Fei Wang, Zhiming Chen, Philip Shields, Sean Lee, Yanqin Wang, Dongyan Zhang, Hongwei Liu and Pingjuan Niu
Appl. Sci. 2022, 12(15), 7431; https://doi.org/10.3390/app12157431 - 24 Jul 2022
Cited by 15 | Viewed by 4541
Abstract
In this paper, the edge strain relaxation of InGaN/GaN MQW micro-pillars is studied. Micro-pillar arrays with a diameter of 3–20 μm were prepared on a blue GaN LED wafer by inductively coupled plasma (ICP) etching. The peak wavelength shift caused by edge strain [...] Read more.
In this paper, the edge strain relaxation of InGaN/GaN MQW micro-pillars is studied. Micro-pillar arrays with a diameter of 3–20 μm were prepared on a blue GaN LED wafer by inductively coupled plasma (ICP) etching. The peak wavelength shift caused by edge strain relaxation was tested using micro-LED pillar array room temperature photoluminescence (PL) spectrum measurements. The results show that there is a nearly 3 nm peak wavelength shift between the micro-pillar arrays, caused by a high range of the strain relaxation region in the small size LED pillar. Furthermore, a 19 μm micro-LED pillar’s Raman spectrum was employed to observe the pillar strain relaxation. It was found that the Raman E2H mode at the edge of the micro-LED pillar moved to high frequency, which verified an edge strain relaxation of = 0.1%. Then, the exact strain and peak wavelength distribution of the InGaN quantum wells were simulated by the finite element method, which provides effective verification of our PL and Raman strain relaxation analysis. The results and methods in this paper provide good references for the design and analysis of small-size micro-LED devices. Full article
(This article belongs to the Special Issue Optoelectronic Materials, Devices, and Applications)
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12 pages, 5398 KB  
Article
Resonance-Enhanced Quantum Well Micropillar Array with Ultra-Narrow Bandwidth and Ultra-High Peak Quantum Efficiency
by Hanxiao Shao, Yun Xu, Longfeng Lv, Bo Cheng and Guofeng Song
Electronics 2022, 11(9), 1396; https://doi.org/10.3390/electronics11091396 - 27 Apr 2022
Cited by 1 | Viewed by 2562
Abstract
Infrared cameras with narrow-band detection capability are widely used for SF6 gas detection, which is an essential part of power equipment inspection. Narrow-band detection is usually achieved by a combination of quantum well infrared photodetectors (QWIPs) and narrow-band filters. Improving the quantum efficiency [...] Read more.
Infrared cameras with narrow-band detection capability are widely used for SF6 gas detection, which is an essential part of power equipment inspection. Narrow-band detection is usually achieved by a combination of quantum well infrared photodetectors (QWIPs) and narrow-band filters. Improving the quantum efficiency of QWIPs and reducing the detection bandwidth are important ways to improve camera performance. In this study, a back-incident-type device of quantum well micropillar array targeting at a 10.5 μm central wavelength is designed and studied by three-dimensional simulation. The operating mechanism of the device was determined by investigating the effect of the device geometry on the quantum efficiency. The enhanced absorption capability of the device mainly comes from the Fabry–Pérot resonance and the antireflection effect. The final device exhibits a remarkable peak quantum efficiency of 83% at 10.5 μm and an ultra-narrow spectral bandwidth of 0.2 μm. These excellent properties are achieved without an antireflective film and narrow-band filter, which can significantly improve the narrow-band capability and integration of the system; the dark current reduces to be 0.2762 times due to the low-duty cycle. These properties indicate that the structure of the quantum well micropillar array is of great significance to the development of QWIPs used in gas detection. Full article
(This article belongs to the Section Optoelectronics)
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