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Keywords = polycrystalline mayenite

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14 pages, 3144 KiB  
Article
Resistance Switching in Polycrystalline C12A7 Electride
by Ivan D. Yushkov, Gennadiy N. Kamaev, Vladimir A. Volodin, Pavel V. Geydt, Aleksandr V. Kapishnikov and Alexander M. Volodin
Micromachines 2022, 13(11), 1917; https://doi.org/10.3390/mi13111917 - 6 Nov 2022
Cited by 2 | Viewed by 2004
Abstract
The memory (memristive) properties of an electride material based on polycrystalline mayenite (C12A7:e−) were studied. The phase composition of the material has been confirmed by such methods as XRD, TEM, Raman, and infrared spectroscopy. The electride state was confirmed by conductivity [...] Read more.
The memory (memristive) properties of an electride material based on polycrystalline mayenite (C12A7:e−) were studied. The phase composition of the material has been confirmed by such methods as XRD, TEM, Raman, and infrared spectroscopy. The electride state was confirmed by conductivity measurements and EPR using a characteristic signal from F+—like centers, but the peak at 186 cm−1, corresponding to an electride with free electrons, was not observed explicitly in the Raman spectra. The temperature dependence of current–voltage characteristics in states with low and high resistance (LRS and HRS) has been studied. In the LRS state, the temperature dependence of the current has a non-Arrhenius character and is described by the Hurd quantum tunnelling model with a Berthelot temperature of 262 K, while in the HRS state, it can be described in terms of the Arrhenius model. In the latter case, the existence of two conduction regions, “impurity” and “intrinsic”, with corresponding activation energies of 25.5 and 40.6 meV, was assumed. The difference in conduction mechanisms is most likely associated with a change in the concentration of free electrons. Full article
(This article belongs to the Special Issue Advances in Emerging Nonvolatile Memory, Volume II)
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13 pages, 6102 KiB  
Article
Electrophysical Properties of Polycrystalline C12A7:e− Electride
by Alina A. Rybak, Ivan D. Yushkov, Nazar A. Nikolaev, Aleksandr V. Kapishnikov, Alexander M. Volodin, Grigory K. Krivyakin, Gennadiy N. Kamaev and Pavel V. Geydt
Electronics 2022, 11(4), 668; https://doi.org/10.3390/electronics11040668 - 21 Feb 2022
Cited by 7 | Viewed by 2981
Abstract
This article demonstrates the possibility of creating memory devices based on polycrystalline mayenite. In the course of the study, structural characterization (XRD, TEM) of ceramic samples of mayenite was carried out, as well as a study of the spectral (THz range) and electrophysical [...] Read more.
This article demonstrates the possibility of creating memory devices based on polycrystalline mayenite. In the course of the study, structural characterization (XRD, TEM) of ceramic samples of mayenite was carried out, as well as a study of the spectral (THz range) and electrophysical characteristics. Materials obtained by calcination at high (1360–1450 °C) temperatures in an inert argon atmosphere differ in the degree of substitution of oxygen anions O2− for electrons, as indicated by the data on the unit cell parameters and dielectric constant coefficients in the range of 0.2–1.3 THz, as well as differences in the conducting properties of the samples under study by more than five orders of magnitude, from the state of the dielectric for C12A7:O2− to the conducting (metal-like) material in the state of the C12A7:e− electride. Measurements of the current–voltage characteristics of ceramic C12A7:e− showed the presence of memristive states previously detected by other authors only in the case of single crystals. The study of the stability of switching between states in terms of resistance showed that the values of currents for states with high and low resistance remain constant up to 180 switching cycles, which is two times higher than the known literature data on the stability of similar prototypes of devices. It is shown that such samples can operate in a switch mode with nonlinear resistance in the range of applied voltages from –1.3 to +1.3 V. Full article
(This article belongs to the Section Electronic Materials, Devices and Applications)
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