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Keywords = pn heterojunction photodiode

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7 pages, 2439 KiB  
Article
Low-Powered Photodetector Based on Two-Dimensional InS0.3Se0.7/WS2 Heterostructure
by Kaiting Zhang, Jie Chang, Chaoyang Tan and Hui Han
Sustainability 2021, 13(12), 6883; https://doi.org/10.3390/su13126883 - 18 Jun 2021
Cited by 3 | Viewed by 2728
Abstract
Photodetectors based on two-dimensional (2D) materials have great potential applications in the field of new energy, such as fuel cells, solar cells, and other fields. Van der Waals (vdW) heterojunction photodiodes are expected to be one of the promising applications of two-dimensional materials [...] Read more.
Photodetectors based on two-dimensional (2D) materials have great potential applications in the field of new energy, such as fuel cells, solar cells, and other fields. Van der Waals (vdW) heterojunction photodiodes are expected to be one of the promising applications of two-dimensional materials due to the photoelectric properties without consideration of lattice mismatch. High-efficiency photoelectric sensors based on two-dimensional materials have great significance to reducing the energy consumption of devices. Here, we build a complex vdW heterostructure by combining InS0.3Se0.7 with another suitable 2D material WS2. Few-layer graphite was used as electrodes to enhance the optoelectronic performance of indium monochalcogenides. Evident photocurrent is observed in the InS0.3Se0.7/WS2 vdW heterostructure device arising from the formed p–n junction at the interface. The uniformity and photoresponse of the InS0.3Se0.7/WS2 vdW heterostructure has been further investigated by the photocurrent mapping. It shows that the entire photovoltaic current was originated from the InS0.3Se0.7/WS2 vdW heterojunction by scanning photocurrent microscope images. Furthermore, the response speed is enhanced at small bias voltage. The transient photoresponse can be well reproduced in almost 100 cycles, indicating the good repeatable optoelectronic performance. Our study indicates that the as-prepared InS0.3Se0.7/WS2 vdW heterostructures are attractive building blocks for photodetectors application. Our findings will open up a new way to further develop high-performance, low-power, and energy-efficient photodetectors based on indium monochalcogenides. Full article
(This article belongs to the Special Issue Advanced Semiconductor Materials for Energy, Electronics and Sensors)
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12 pages, 5579 KiB  
Article
Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions
by Adama Mballo, Ashutosh Srivastava, Suresh Sundaram, Phuong Vuong, Soufiane Karrakchou, Yacine Halfaya, Simon Gautier, Paul L. Voss, Ali Ahaitouf, Jean Paul Salvestrini and Abdallah Ougazzaden
Nanomaterials 2021, 11(1), 211; https://doi.org/10.3390/nano11010211 - 15 Jan 2021
Cited by 24 | Viewed by 4705
Abstract
Reliable p-doped hexagonal boron nitride (h-BN) could enable wide bandgap optoelectronic devices such as deep ultra-violet light emitting diodes (UV LEDs), solar blind photodiodes and neutron detectors. We report the study of Mg in h-BN layers as well as Mg h-BN/AlGaN heterostructures. Mg [...] Read more.
Reliable p-doped hexagonal boron nitride (h-BN) could enable wide bandgap optoelectronic devices such as deep ultra-violet light emitting diodes (UV LEDs), solar blind photodiodes and neutron detectors. We report the study of Mg in h-BN layers as well as Mg h-BN/AlGaN heterostructures. Mg incorporation in h-BN was studied under different biscyclopentadienyl-magnesium (Cp2Mg) molar flow rates. 2θ-ω x-ray diffraction scans clearly evidence a single peak, corresponding to the (002) reflection plane of h-BN with a full-width half maximum increasing with Mg incorporation in h-BN. For a large range of Cp2Mg molar flow rates, the surface of Mg doped h-BN layers exhibited characteristic pleats, confirming that Mg doped h-BN remains layered. Secondary ion mass spectrometry analysis showed Mg incorporation, up to 4 × 1018 /cm3 in h-BN. Electrical conductivity of Mg h-BN increased with increased Mg-doping. Heterostructures of Mg h-BN grown on n-type Al rich AlGaN (58% Al content) were made with the intent of forming a p-n heterojunction. The I-V characteristics revealed rectifying behavior for temperatures from 123 to 423 K. Under ultraviolet illumination, photocurrent was generated, as is typical for p-n diodes. C-V measurements evidence a built-in potential of 3.89 V. These encouraging results can indicate p-type behavior, opening a pathway for a new class of wide bandgap p-type layers. Full article
(This article belongs to the Section Synthesis, Interfaces and Nanostructures)
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9 pages, 689 KiB  
Article
Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate
by Kiyeol Kwak, Kyoungah Cho and Sangsig Kim
Sensors 2010, 10(10), 9118-9126; https://doi.org/10.3390/s101009118 - 12 Oct 2010
Cited by 3 | Viewed by 11320
Abstract
In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO [...] Read more.
In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter’s photocurrent efficiency by adjusting the gate voltage of the FET. When the FET is switched on by biasing a gate voltage of −9 V, the photocurrent efficiency of the photodiode is three times higher than that when the FET is switched off by biasing a gate voltage of 0 V. Full article
(This article belongs to the Special Issue Photodetectors and Imaging Technologies)
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