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Keywords = parasitic BJT action

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7 pages, 2120 KiB  
Communication
N-Channel MOSFET Reliability Issue Induced by Visible/Near-Infrared Photons in Image Sensors
by Chun-Hsien Liu and Sheng-Di Lin
Sensors 2023, 23(23), 9586; https://doi.org/10.3390/s23239586 - 3 Dec 2023
Viewed by 1514
Abstract
Image sensors such as single-photon avalanched diode (SPAD) arrays typically adopt in-pixel quenching and readout circuits, and the under-illumination first-stage readout circuits often employs high-threshold input/output (I/O) or thick-oxide metal-oxide-semiconductor field-effect transistors (MOSFETs). We have observed reliability issues with high-threshold n-channel MOSFETs when [...] Read more.
Image sensors such as single-photon avalanched diode (SPAD) arrays typically adopt in-pixel quenching and readout circuits, and the under-illumination first-stage readout circuits often employs high-threshold input/output (I/O) or thick-oxide metal-oxide-semiconductor field-effect transistors (MOSFETs). We have observed reliability issues with high-threshold n-channel MOSFETs when they are exposed to strong visible light. The specific stress conditions have been applied to observe the drain current (Id) variations as a function of gate voltage. The experimental results indicate that photo-induced hot electrons generate interface trap states, leading to Id degradation including increased off-state current (Ioff) and decreased on-state current (Ion). The increased Ioff further activates parasitic bipolar junction transistors (BJT). This reliability issue can be avoided by forming an inversion layer in the channel under appropriate bias conditions or by reducing the incident photon energy. Full article
(This article belongs to the Special Issue Recent Advances in CMOS Image Sensor)
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