Search Results (2)

A novel double-impurity doping process for silicon (Si) surfaces was developed, utilizing nanosecond-laser melting of an 11 nm thick gold (Au) top film and a Si wafer substrate in a laser plasma-activated liquid nitrogen (LN) environment. Scanning electron microscopy revealed a fluence- and exposure-independent surface micro-spike topography, while energy-dispersive X-ray spectroscopy identified minor Au (~0.05 at. %) and major N (~1–2 at. %) dopants localized within a 0.5 μm thick surface layer and the slight surface post-oxidation of the micro-relief (oxygen (O), ~1.5–2.5 at. %). X-ray photoelectron spectroscopy was used to identify the bound surface (SiN_x) and bulk doping chemical states of the introduced nitrogen (~10 at. %) and the metallic (<0.01 at. %) and cluster (<0.1 at. %) forms of the gold dopant, and it was used to evaluate their depth distributions, which were strongly affected by the competition between gold dopants due to their marginal local concentrations and the other more abundant dopants (N, O). In this study, 532 nm Raman microspectroscopy indicated a slight reduction in the crystalline order revealed in the second-order Si phonon band; the tensile stresses or nanoscale dimensions of the resolidified Si nano-crystallites envisioned by the main Si optical–phonon peak; a negligible a-Si abundance; and a low-wavenumber peak of the Si₃N₄ structure. In contrast, Fourier transform infrared (FT-IR) reflectance and transmittance studies exhibited only broad structureless absorption bands in the range of 600–5500 cm⁻¹ related to dopant absorption and light trapping in the surface micro-relief. The room-temperature electrical characteristics of the laser double-doped Si layer—a high carrier mobility of 1050 cm²/Vs and background carrier sheet concentration of ~2 × 10¹⁰ cm⁻² (bulk concentration ~10¹⁴–10¹⁵ cm⁻³)—are superior to previously reported parameters of similar nitrogen-implanted/annealed Si samples. This novel facile double-element laser-doping procedure paves the way to local maskless on-demand introductions of multiple intra-gap intermediate donor and acceptor bands in Si, providing related multi-wavelength IR photoconductivity for optoelectronic applications. Full article

In recent years, increasing numbers of pink-coloured CVD synthetic diamonds have appeared on the market. One of the major sources is Huzhou SinoC Semiconductor Science and Technology Co., Ltd., Zhejiang province of China. In this article, seven pink-coloured CVD-grown diamonds produced in the last two years by Huzhou have been investigated and identified, including their gemological and spectroscopic characteristics. In DiamondView, they fluoresced orange–red, with an obscure striated growth structure, which is common for CVD synthetics. The mid-IR absorption spectra of these samples showed some single nitrogen and hydrogen-related features (1130, 1344, 3123, 3323 cm⁻¹), which indicated that the diamonds were type Ib and were CVD-grown diamonds. The H1a defect annealed out at approximately 1400 °C, whereas the 3107 cm⁻¹ defect was produced by annealing above 1700 or 1800 °C. This implied that the samples had undergone two separate heat treatments: first, a high-temperature anneal (possibly an HPHT treatment to reduce any brown colour), which would have produced the 3107 cm⁻¹ defects and a small number of A centres, followed by irradiation, followed by annealing above 800 °C to make the vacancies mobile. The UV–Vis–NIR absorption spectra showed distinct NV-related features (575 and 637 nm), the main reason for the pink colour. Photoluminescence spectra obtained at liquid nitrogen temperature recorded radiation-related emissions (388.9, 503.5 nm), a strong N-V centre, H3 and H2 defects, and many unassigned emissions. These pink CVD products can be separated from natural and treated pink-coloured diamonds by a combination of optical spectroscopic properties, such as fluorescence colour, and absorption features in the infrared and UV–Vis regions. Full article