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Keywords = macaroni channel

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8 pages, 1931 KiB  
Article
Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages
by Dongwoo Lee and Changhwan Shin
Micromachines 2022, 13(7), 1139; https://doi.org/10.3390/mi13071139 - 18 Jul 2022
Cited by 10 | Viewed by 3994
Abstract
Over the past few decades, NAND flash memory has advanced with exponentially-increasing bit growth. As bit cells in 3D NAND flash memory are stacked up and scaled down together, some potential challenges should be investigated. In order to reasonably predict those challenges, a [...] Read more.
Over the past few decades, NAND flash memory has advanced with exponentially-increasing bit growth. As bit cells in 3D NAND flash memory are stacked up and scaled down together, some potential challenges should be investigated. In order to reasonably predict those challenges, a TCAD (technology computer-aided design) simulation for 3D NAND structure in mass production has been run. By aggressively stacking-up and scaling-down bit cells in a string, the structure of channel hole was varied from a macaroni to nanowire. This causes the threshold voltage difference (ΔVth) between the top cell and bottom cell in the same string. In detail, ΔVth between the top cell and bottom cell mostly depends on the xy-scaling, but the way how ΔVth is affected is not very dependent on the stack height. Full article
(This article belongs to the Section D1: Semiconductor Devices)
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