Search Results (2)

This article presents the research results of lead-free Ba_1−3/2xLa_x(Fe_0.5Nb_0.5)O₃ (BFNxLa) ceramic materials doped with La (x = 0.00–0.06) obtained via the solid-state reaction method. The tests of the BFNxLa ceramic samples included structural (X-ray), morphological (SEM, EDS, EPMA), DC electrical conductivity, and dielectric measurements. For all BFNxLa ceramic samples, the X-ray tests revealed a perovskite-type cubic structure with the space group Pm$\overline{3}$m. In the case of the samples with the highest amount of lanthanum, i.e., for x = 0.04 (BFN4La) and x = 0.06 (BFN6La), the X-ray analysis also showed a small amount of pyrochlore LaNbO₄ secondary phase. In the microstructure of BFNxLa ceramic samples, the average grain size decreases with increasing La content, affecting their dielectric properties. The BFN ceramics show relaxation properties, diffusion phase transition, and very high permittivity at room temperature (56,750 for 1 kHz). The admixture of lanthanum diminishes the permittivity values but effectively reduces the dielectric loss and electrical conductivity of the BFNxLa ceramic samples. All BFNxLa samples show a Debye-like relaxation behavior at lower frequencies; the frequency dispersion of the dielectric constant becomes weaker with increasing admixtures of lanthanum. Research has shown that using an appropriate amount of lanthanum introduced to BFN can obtain high permittivity values while decreasing dielectric loss and electrical conductivity, which predisposes them to energy storage applications. Full article

Ferroelectric materials have gained high interest for photovoltaic applications due to their open-circuit voltage not being limited to the band gap of the material. In the past, different lead-based ferroelectric perovskite thin films such as Pb(Zr,Ti)O₃ (Pb,La)(Zr,Ti)O₃ and PbTiO₃ were investigated with respect to their photovoltaic efficiency. Nevertheless, due to their high band gaps they only absorb photons in the UV spectral range. The well-known ferroelectric PbFe_0.5Nb_0.5O₃ (PFN), which is in a structure similar to the other three, has not been considered as a possible candidate until now. We found that the band gap of PFN is around 2.75 eV and that the conductivity can be increased from 23 S/µm to 35 S/µm during illumination. The relatively low band gap value makes PFN a promising candidate as an absorber material. Full article