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Keywords = gate-normal nanowire tunnel field-effect transistor (NWTFET)

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9 pages, 4895 KiB  
Article
Investigation on the Hump Behavior of Gate-Normal Nanowire Tunnel Field-Effect Transistors (NWTFETs)
by Min Woo Kang and Woo Young Choi
Appl. Sci. 2020, 10(24), 8880; https://doi.org/10.3390/app10248880 - 11 Dec 2020
Cited by 1 | Viewed by 2898
Abstract
The hump behavior of gate-normal nanowire tunnel field-effect transistors (NWTFETs) is investigated by using a three-dimensional technology computer-aided design (TCAD) simulation. The simulation results show that the hump behavior degrades the subthreshold swing (SS) and on-current (Ion) because [...] Read more.
The hump behavior of gate-normal nanowire tunnel field-effect transistors (NWTFETs) is investigated by using a three-dimensional technology computer-aided design (TCAD) simulation. The simulation results show that the hump behavior degrades the subthreshold swing (SS) and on-current (Ion) because the corners and sides of nanowires (NWs) have different surface potentials. The hump behavior can be successfully suppressed by increasing the radius of curvature (R) of NWs and reducing gate insulator thickness (Tins). Full article
(This article belongs to the Special Issue Device Modeling for TCAD and Circuit Simulation)
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