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Keywords = double layer junction termination structure

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11 pages, 4882 KB  
Article
Modulation of Diamond PN Junction Diode with Double-Layered n-Type Diamond by Using TCAD Simulation
by Caoyuan Mu, Genzhuang Li, Xianyi Lv, Qiliang Wang, Hongdong Li, Liuan Li and Guangtian Zou
Electronics 2024, 13(9), 1703; https://doi.org/10.3390/electronics13091703 - 28 Apr 2024
Cited by 1 | Viewed by 2831
Abstract
This study proposed a novel double-layer junction termination structure for vertical diamond-based PN junction diodes (PND). The effects of the geometry and doping concentration of the junction termination structure on the PNDs’ electrical properties are investigated using Silvaco TCAD software (Version 5.0.10.R). It [...] Read more.
This study proposed a novel double-layer junction termination structure for vertical diamond-based PN junction diodes (PND). The effects of the geometry and doping concentration of the junction termination structure on the PNDs’ electrical properties are investigated using Silvaco TCAD software (Version 5.0.10.R). It demonstrates that the electric performances of PND with a single n-type diamond layer are sensitive to the doping concentration and electrode location of the n-type diamond. To further suppress the electric field crowding and obtain a better balance between breakdown voltage and on-resistance, a double-layer junction termination structure is introduced and evaluated, yielding significantly improved electronic performances. Those results provide some useful thoughts for the design of vertical diamond PND devices. Full article
(This article belongs to the Special Issue Recent Advances in Wide Bandgap Semiconductors)
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13 pages, 5292 KB  
Article
Beamwidth-Reconfigurable Circularly Polarized Slot Antenna Based on Half-Mode Substrate-Integrated Waveguide
by Jeong-Hun Park and Moon-Que Lee
Electronics 2023, 12(2), 363; https://doi.org/10.3390/electronics12020363 - 10 Jan 2023
Cited by 2 | Viewed by 2966
Abstract
Beamwidth-reconfigurable antennas are useful for the intersatellite link of low earth orbit formation flying and constellation, as they prevent unauthorized satellites from eavesdropping. In this article, a circularly polarized slot array antenna based on a half-mode substrate-integrated waveguide (HMSIW) for the K-band beamwidth [...] Read more.
Beamwidth-reconfigurable antennas are useful for the intersatellite link of low earth orbit formation flying and constellation, as they prevent unauthorized satellites from eavesdropping. In this article, a circularly polarized slot array antenna based on a half-mode substrate-integrated waveguide (HMSIW) for the K-band beamwidth reconfiguration is proposed using a new radio frequency (RF) switch structure and a pair of modified −45° and +45° linearly polarized HMSIW slot arrays for the dual operation of a single-pole double-throw (SPDT)/a power divider (PD) and easy integration with other components, respectively. The RF switch structure consists of a T-junction PD, λ/4 lines, and beam lead PIN diodes with current control resistors and without a DC block circuit for low DC power consumption and size reduction. The −45°/+45° linearly polarized HMSIW slot arrays providing linear and circular polarizations (LP and CP, respectively) are operated for CP. The use of a short-circuited termination instead of dissipative termination results in easier integration with other components because the 16 radiating slots consume most of the input power. The dimension of the beamwidth-reconfigurable antenna including the bottom metal layer is 157.2 × 23.3 × 0.254 mm3 (12.5λ0 × 1.86λ0 × 0.0202λ0). The RF switch for the SPDT shows the insertion losses of 1.8–2.3 and 16.7–24.2 dB and an isolation of 20.9–33.4 dB for both outputs within the 10-dB bandwidth. The RF switch for the PD has an insertion loss of 3.9–4.8 dB. The one- and two-antenna operation modes of the CP antenna provide the gains of 9.44 and 6.99 dBic, the axial ratios of 2.24 and 3.47 dB, and the horizontal beamwidths of 35.8° and 78.2°, respectively. Full article
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9 pages, 2651 KB  
Article
Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges
by Yifei Huang, Ying Wang, Xiaofei Kuang, Wenju Wang, Jianxiang Tang and Youlei Sun
Micromachines 2018, 9(12), 610; https://doi.org/10.3390/mi9120610 - 22 Nov 2018
Cited by 8 | Viewed by 5401
Abstract
In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other termination structures are investigated for comparison using numerical [...] Read more.
In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other termination structures are investigated for comparison using numerical simulations. Step-DZ-JTE greatly reduces the sensitivity of breakdown voltage (BV) and surface charges (SC). For a 30-μm thick epi-layer, the optimized Step-DZ-JTE shows 90% of the theoretical BV with a wide tolerance of 12.2 × 1012 cm−2 to the JTE dose and 85% of the theoretical BV with an improved tolerance of 3.7 × 1012 cm−2 to the positive SC are obtained. Furthermore, when combined with the field plate technique, the performance of the Step-DZ-JTE is further improved. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductor Based Micro/Nano Devices)
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