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Keywords = decyltrimethoxysilane

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13 pages, 3238 KiB  
Article
Comparison of Self-Assembled Monolayers Using 3-Aminopropyltrimethoxysilane and Decyltrimethoxysilane in Vapor Phase for Porous SiOCH Dielectrics
by Yi-Lung Cheng, Joe Kao, Hao-Wei Zhang and Chih-Yen Lee
Coatings 2023, 13(3), 507; https://doi.org/10.3390/coatings13030507 - 24 Feb 2023
Cited by 3 | Viewed by 1960
Abstract
Self-assembled monolayers (SAMs) are the emerging materials to act as barriers in the back-end-of-line interconnects for advanced technological nodes. In this study, SAMs were formed on the porous SiOCH (p-SiOCH) films by using different precursors: 3-Aminopropyltrimethoxysilane (APTMS) or decyltrimethoxysilane (DTMOS), in the vapor [...] Read more.
Self-assembled monolayers (SAMs) are the emerging materials to act as barriers in the back-end-of-line interconnects for advanced technological nodes. In this study, SAMs were formed on the porous SiOCH (p-SiOCH) films by using different precursors: 3-Aminopropyltrimethoxysilane (APTMS) or decyltrimethoxysilane (DTMOS), in the vapor phase. Effects of SAMs precursors on the electrical characteristics and reliability of p-SiOCH films were characterized and compared. Experimental results indicated that both SAMs derived from APTMS and DTMOS enhanced the breakdown field and time-dependent dielectric breakdown, provided Cu barrier capacity, and promoted adhesion with Cu. In particular, APTMS-SAMs had a larger improvement, but a larger increase in the dielectric constant was observed as compared to DTMOS-SAMs. Therefore, SAMs derived from APTMS are a promising candidate for sub-nanometer barrier application for advanced interconnects. Full article
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10 pages, 3607 KiB  
Article
Comparison of Self-Assembled Monolayers on SiO2 and Porous SiOCH Dielectrics by Decyltrimethoxysilane Vapor Treatment
by Yi-Lung Cheng, Wei-Fan Peng, Chih-Yen Lee, Giin-Shan Chen and Jau-Shiung Fang
Coatings 2022, 12(7), 926; https://doi.org/10.3390/coatings12070926 - 30 Jun 2022
Cited by 1 | Viewed by 1858
Abstract
Self-assembled monolayers (SAMs) are emerging as materials that are candidates of barriers used in back-end-of–line interconnects of integrated circuits for future generations. In this study, SAMs were formed on the SiO2 and porous SiOCH (p-SiOCH) films by using decyltrimethoxysilane (DTMOS) precursor in [...] Read more.
Self-assembled monolayers (SAMs) are emerging as materials that are candidates of barriers used in back-end-of–line interconnects of integrated circuits for future generations. In this study, SAMs were formed on the SiO2 and porous SiOCH (p-SiOCH) films by using decyltrimethoxysilane (DTMOS) precursor in vapor phase at a temperature of 100 °C. The effects of the formation of SAMs at the surfaces of SiO2 and p-SiOCH films on the electrical characteristics were characterized and compared. With O2 plasma irradiation, SAMs could successfully form on both SiO2 and p-SiOCH films, thereby enhancing the adhesion and dielectric breakdown field. In the p-SiOCH films, SAMs sealed the surface pores and had higher coverage, promoting the effectiveness of the Cu barrier. In the Cu/porous low-k integrated interconnects for advanced technological nodes, therefore, SAMs are promising emerging materials acting as a barrier and adhesive. On the other hand, for SiO2 films, SAMs weakened the barrier; however, they can act as an interfacial adhesion enhancer. Full article
(This article belongs to the Special Issue Plasma Processing and Thin Film Deposition)
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9 pages, 2929 KiB  
Article
Change in Interface Characteristics of ITO Modified with n-decyltrimethoxysilane
by Myung-Gyun Baek, Johng-Eon Shin, Dong-Hyun Hwang, Sung-Hoon Kim, Hong-Gyu Park and Sang-Geon Park
Crystals 2020, 10(8), 645; https://doi.org/10.3390/cryst10080645 - 27 Jul 2020
Cited by 3 | Viewed by 3601
Abstract
Herein, we examined changes in the interfacial properties of organic light-emitting diodes when n-decyltrimethoxysilane (CH3SAM) was deposited on the surface of an indium tin oxide (ITO) electrode for various deposition times. It was revealed that the interfacial properties varied with deposition time. As [...] Read more.
Herein, we examined changes in the interfacial properties of organic light-emitting diodes when n-decyltrimethoxysilane (CH3SAM) was deposited on the surface of an indium tin oxide (ITO) electrode for various deposition times. It was revealed that the interfacial properties varied with deposition time. As the latter increased, so did the measured value of the contact angle, and ITO substrate exhibited a lower wettability. The contact angle measurements for bare ITO at 1, 10, 30, and 90 min were 57.41°, 63.43°, 73.76°, 81.47°, respectively, and the highest value obtained was 93.34°. In addition, the average roughness and work function of the ITO were measured using atomic force microscopy and X-ray photoelectron spectroscopy. As the deposition time of CH3SAM on the ITO substrates increased, it was evident that the former was well aligned with the latter, improving surface modification. The work function of CH3SAM, modified on the ITO substrates, improved by approximately 0.11 eV from 5.05–5.16 eV. The introduction of CH3SAM to the ITO revealed the ease of adjustment of the characteristics of ITO substrates. Full article
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