Search Results (4)

Carbon dots (CDs) have attracted considerable interest from the scientific community due to their exceptional properties, such as high photoluminescence, broadband absorption, low toxicity, water solubility and (photo)chemical stability. As a result, they have been applied in several fields, such as sensing, bioimaging, artificial lighting and catalysis. In particular, CDs may act as sole photocatalysts or as part of photocatalytic nanocomposites. This study aims to provide a comprehensive review on the use of CDs as sole photocatalysts in the areas of hydrogen production via water splitting, photodegradation of organic pollutants and photoreduction and metal removal from wastewaters. Furthermore, key limitations preventing a wider use of CDs as photocatalysts are pointed out. It is our hope that this review will serve as a basis on which researchers may find useful information to develop sustainable methodologies for the synthesis and use of photocatalytic CDs. Full article

The photo-thermoelectric (PTE) effect in electronic materials effectively combines photo-absorption-induced local heating and associated thermoelectric conversion for uncooled and broadband photo-detection. In particular, this work comprehensively summarizes the operating mechanism of carbon nanotube (CNT)-film-based PTE sensors and ubiquitous non-destructive inspections realized by exploiting the material properties of CNT films. Formation of heterogeneous material junctions across the CNT-film-based PTE sensors, namely photo-detection interfaces, triggers the Seebeck effect with photo-absorption-induced local heating. Typical photo-detection interfaces include a channel–electrode boundary and a junction between P-type CNTs and N-type CNTs (PN junctions). While the original CNT film channel exhibits positive Seebeck coefficient values, the material selections of the counterpart freely govern the intensity and polarity of the PTE response signals. Based on these operating mechanisms, CNT film PTE sensors demonstrate a variety of physical and chemical non-destructive inspections. The device aggregates broad multi-spectral optical information regarding the targets and reconstructs their inner composite or layered structures. Arbitrary deformations of the device are attributed to the macroscopic flexibility of the CNT films to further monitor targets from omni-directional viewing angles without blind spots. Detection of blackbody radiation from targets using the device also visualizes their behaviors and associated changes. Full article

A narrow bandgap of a few layers of platinic disulfide (PtS₂) has shown great advantages in large-area array photodetectors for wide spectra photodetection, which is necessary for infrared imaging and infrared sensing under extreme conditions. The photodetection performance of two dimensional materials is highly dependent on the crystalline quality of the film, especially under high operating temperatures. Herein, we developed large area uniform array photodetectors using a chemical vapor deposition grown on PtS₂ films for short-wave infrared photodetection at high operating temperature. Due to the high uniformity and crystalline quality of as-grown large area PtS₂ films, as-fabricated PtS₂ field effect transistors have shown a broadband photo-response from 532 to 2200 nm with a wide working temperature from room temperature to 373 K. The photo-responsivity (R) and specific detectivity (D*) of room temperature and 373 K are about 3.20 A/W and 1.24 × 10⁷ Jones, and 839 mA/W and 6.1 × 10⁶ Jones, at 1550 nm, respectively. Our studies pave the way to create an effective strategy for fabricating large-area short-wave infrared (SWIR) array photodetectors with high operating temperatures using chemical vapor deposition (CVD) grown PtS₂ films. Full article

Graphene-based photodetection (PD) devices have been broadly studied for their broadband absorption, high carrier mobility, and mechanical flexibility. Owing to graphene’s low optical absorption, the research on graphene-based PD devices so far has relied on hybrid heterostructure devices to enhance photo-absorption. Designing a new generation of PD devices supported by silicon (Si) film is considered as an innovative technique for PD devices; Si film-based devices are typically utilized in optical communication and image sensing owing to the remarkable features of Si, e.g., high absorption, high carrier mobility, outstanding CMOS integration. Here, we integrate (i) Si film via a splitting/printing transfer with (ii) graphite film grown by a pyrolysis method. Consequently, p-type Si film/graphite film/n-type Si-stacked PD devices exhibited a broadband detection of 0.4–4 μm (in computation) and obtained good experimental results such as the responsivity of 100 mA/W, specific detectivity of 3.44 × 10⁶ Jones, noise-equivalent power of 14.53 × 10⁻¹⁰ W/(Hz)^1/2, external quantum efficiency of 0.2, and rise/fall time of 38 μs/1 μs under 532 nm laser illumination. Additionally, our computational results also confirmed an enhanced light absorption of the above stacked 2D heterostructure film-based PD device compatible with the experimental results. Full article