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Keywords = accumulated creep energy density

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16 pages, 6813 KiB  
Article
Creep–Fatigue Behavior and Life Prediction of Medium-Si-Mo Ductile Iron
by Mucheng Liu, Huihua Feng and Peirong Ren
Appl. Sci. 2025, 15(10), 5406; https://doi.org/10.3390/app15105406 - 12 May 2025
Viewed by 516
Abstract
Exhaust manifolds accumulate creep and fatigue damage under cyclic thermal loading, leading to localized failure. Understanding a material’s mechanical behavior is crucial for accurate life assessment. This study systematically investigated the low-cycle fatigue (LCF) and creep–fatigue interaction behaviors of medium-silicon molybdenum ductile iron. [...] Read more.
Exhaust manifolds accumulate creep and fatigue damage under cyclic thermal loading, leading to localized failure. Understanding a material’s mechanical behavior is crucial for accurate life assessment. This study systematically investigated the low-cycle fatigue (LCF) and creep–fatigue interaction behaviors of medium-silicon molybdenum ductile iron. It was found that QTRSi4Mo exhibited cyclic hardening at room temperature and 400 °C, whereas it exhibited cyclic softening at 600 °C and 700 °C for low-cycle stress–strain responses. During creep–fatigue tests with hold time, variations in the strain amplitude did not alter the hysteresis loop shape or the hardening/softening characteristics of the material. They only induced a slight upward shift in the yield center. Additionally, stress relaxation primarily occurred in the initial phase of the hold period, so the hold duration had little effect on the final stress value. The investigation of creep–fatigue life models highlighted that accurately characterizing the damage induced by stress relaxation during the hold stage is critical for creep damage evaluation. The calculated creep damage results differed greatly from the experimental results of the time fraction model (TF). A combined approach using the strain energy density dissipation model (T-SEDE) and the Ostergren method demonstrated excellent predictive capability for creep–fatigue life. Full article
(This article belongs to the Special Issue Advances and Applications in Mechanical Fatigue and Life Assessment)
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26 pages, 12253 KiB  
Article
Crystalline Silicon (c-Si) Solar Cell Interconnect Damage Prediction Function Based on Effect of Temperature Ramps and Dwells on Creep Damage under Field Thermal Cycling
by Frank Kwabena Afriyie Nyarko, Gabriel Takyi, Anthony Agyei Agyemang and Charles Kofi Kafui Sekyere
Crystals 2021, 11(6), 633; https://doi.org/10.3390/cryst11060633 - 1 Jun 2021
Cited by 1 | Viewed by 2717
Abstract
c-Si solar cell interconnection damages from thermal cycles emanate from cumulative damage contributions from the various load steps in a typical thermal cycle. In general, a typical thermal cycle involves five thermal load steps, namely: 1st cold dwell, ramp-up, hot dwell, ramp-down, and [...] Read more.
c-Si solar cell interconnection damages from thermal cycles emanate from cumulative damage contributions from the various load steps in a typical thermal cycle. In general, a typical thermal cycle involves five thermal load steps, namely: 1st cold dwell, ramp-up, hot dwell, ramp-down, and 2nd cold dwell. To predict the contributions of each of these load steps to creep damage in soldered interconnections, each of the respective load steps needs to be profiled to accurately fit a function capable of predicting the damage contributions from a given number of thermal cycles. In this study, a field thermal cycle profile generated from in situ thermal cyclings at a test site in Kumasi, a hot humid region of sub-Saharan Africa, is used to predict damage in solar cell interconnections from accumulated creep energy density using finite element analysis (FEA). The damage was assessed for two different solder formulations, namely: Pb60Sn40 and Sn3.8Ag0.7Cu (lead-free). The results from the FEA simulations show that the cooling (ramp-down) load steps accounted for the highest accumulated creep energy density (ACED) damage in solder interconnections. The ramp-up load steps followed this closely. The cumulative contributions of the two load steps accounted for 78% and 88% of the total damage per cycle in the Pb60Sn40 and Sn3.8Ag0.7Cu solder interconnections, respectively. Furthermore, a study of the damage profiles from each of the five load steps revealed that each of the damage functions from the various load steps is a step function involving the first two thermal cycles, on one hand, and the remaining 10 thermal cycles on the other hand. The damage from the first two thermal cycles can be predicted from a logarithmic function, whereas the damage from the remaining 10 thermal cycles is predicted using six-order polynomial functions. The ACED results computed from the damage functions are in close agreement with the results from the FEA simulation. The functions generated provide useful relations for the prediction of the life (number of cycles to failure) of solder interconnections in solar cells. The systematic approach used in this study can be repeated for other test sites to generate damage functions for the prediction of the life of c-Si PV cells with SnPb and lead-free solder interconnections. Full article
(This article belongs to the Special Issue Advances in Perovskite Ceramics, Crystals and Thin Films)
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21 pages, 8504 KiB  
Article
Study on Creep Damage in Sn60Pb40 and Sn3.8Ag0.7Cu (Lead-Free) Solders in c-Si Solar PV Cell Interconnections under In-Situ Thermal Cycling in Ghana
by Frank Kwabena Afriyie Nyarko, Gabriel Takyi and Francis Boafo Effah
Crystals 2021, 11(4), 441; https://doi.org/10.3390/cryst11040441 - 19 Apr 2021
Cited by 2 | Viewed by 2936
Abstract
A numerical study on the creep damage in soldered interconnects in c-Si solar photovoltaic cells has been conducted using equivalent creep strain, accumulated creep strain and accumulated creep energy density methods. The study used data from outdoor weathering of photovoltaic (PV) modules over [...] Read more.
A numerical study on the creep damage in soldered interconnects in c-Si solar photovoltaic cells has been conducted using equivalent creep strain, accumulated creep strain and accumulated creep energy density methods. The study used data from outdoor weathering of photovoltaic (PV) modules over a three-year period (2012–2014) to produce temperature cycle profiles that served as thermal loads and boundary conditions for the investigation of the soldered interconnects’ thermo-mechanical response when exposed to real-world conditions. A test region average (TRA) temperature cycle determined in a previous study for the 2012–2014 data was also used. The appropriate constitutive models of constituent materials forming a typical solar cell were utilized to generate accurate material responses to evaluate the damage from the thermal cycles. This study modeled two forms of soldered interconnections: Sn60Pb40 (SnPb) and Sn3.8Ag0.7Cu (Pb-free). The results of the damage analysis of the interconnections generated from the thermal cycle loads using accumulated creep strain method showed that the Pb-free solder interconnection recorded greater damage than that of the SnPb-solder interconnection for the TRA, 2012, 2013 and 2014 temperature cycles. The percentage changes from SnPb to Pb-free were 57.96%, 43.61%, 44.87% and 45.43%, respectively. This shows significant damage to the Pb-free solder under the TRA conditions. Results from the accumulated creep energy density (ACED) method showed a percentage change of 71.4% (from 1.3573 × 105 J/mm3 to 2.3275 × 105 J/mm3) in accumulated creep energy density by replacing SnPb-solder with Pb-free solder interconnection during the TRA thermal cycle. At the KNUST test site in Kumasi, Ghana, the findings show that Sn60Pb40 solder interconnections are likely to be more reliable than Pb-free solder interconnections. The systematic technique employed in this study would be useful to the thermo-mechanical reliability research community. The study also provides useful information to PV design and manufacturing engineers for the design of robust PV modules. Full article
(This article belongs to the Section Inorganic Crystalline Materials)
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