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Keywords = Tamm phonon polariton

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10 pages, 4581 KiB  
Article
Selective Properties of Mid-Infrared Tamm Phonon-Polaritons Emitter with Silicon Carbide-Based Structures
by Chengxuan Gong and Gaige Zheng
Micromachines 2022, 13(6), 920; https://doi.org/10.3390/mi13060920 - 10 Jun 2022
Cited by 9 | Viewed by 2459
Abstract
Electromagnetic (EM) absorbers and emitters have attracted much interest because of their versatile applications. A photonic heterostructure composed of silicon carbide (SiC) layer/germanium (Ge) cavity/distributed Bragg reflector (DBR) has been proposed. Selective emission properties have been investigated through rigorous coupled wave analysis (RCWA) [...] Read more.
Electromagnetic (EM) absorbers and emitters have attracted much interest because of their versatile applications. A photonic heterostructure composed of silicon carbide (SiC) layer/germanium (Ge) cavity/distributed Bragg reflector (DBR) has been proposed. Selective emission properties have been investigated through rigorous coupled wave analysis (RCWA) method. The results illustrate that Tamm phonon-polaritons can be excited, and the magnetic field is partially centralized at the junction of Ge cavity and SiC film, aimed to improve the interactions of photon–phonon. The absorptivity/emissivity of the structure can be better optimized by controlling the coupling of surface modes with the incident wave. Near-unity absorption can be achieved through optimizing the SiC grating/Ge cavity/distributed Bragg reflector (DBR) multilayer structure with geometrical parameters of ds = 0.75 μm, dg = 0.7 μm, d1 = 1.25 μm and d2 = 0.75 μm, respectively. Physical mechanism of selective emission characteristics is deliberated. In addition, the simulation results demonstrate that the emitter desensitizes to the incidence angle and polarization state in the mid-infrared (MIR) range. This research ameliorates the function of the selective emitters, which provides more efficient design for SiC-based systems. Full article
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9 pages, 2432 KiB  
Article
Multi-Channel High-Performance Absorber Based on SiC-Photonic Crystal Heterostructure-SiC Structure
by Jing Han, Jijuan Jiang, Tong Wu, Yang Gao and Yachen Gao
Nanomaterials 2022, 12(2), 289; https://doi.org/10.3390/nano12020289 - 17 Jan 2022
Cited by 15 | Viewed by 2365
Abstract
The multi-channel high-efficiency absorber in the mid-infrared band has broad application prospects. Here, we propose an SiC-photonic crystal (PhC) heterostructure-SiC structure to realize the absorber. The absorption characteristics of the structure are studied theoretically. The results show that the structure can achieve high-efficiency [...] Read more.
The multi-channel high-efficiency absorber in the mid-infrared band has broad application prospects. Here, we propose an SiC-photonic crystal (PhC) heterostructure-SiC structure to realize the absorber. The absorption characteristics of the structure are studied theoretically. The results show that the structure can achieve high-efficiency multi-channel absorption in the mid-infrared range. The absorption peaks come from the coupling of the dual Tamm phonon polariton (TPhP) mode formed at the interface between the two SiC layers and the photonic crystal, and the optical Tamm state (OTS) mode formed in the PhC heterostructure. By adjusting the thickness of the air dielectric layer and the period of the PhC in the heterostructure, the mode coupling intensity can be regulated; thereby, the position and intensity of the absorption peak can be adjusted. In addition, the absorption peaks of TE and TM polarized light can be controlled by changing the incident angle. Adjusting the incident angle can also control the excitation and intensity of the epsilon-near-zero (ENZ) phonon polariton mode produced by TM polarized light. This kind of light absorber may have potential applications in sensors, filters, modulators, switches, thermal radiators, and so on. Full article
(This article belongs to the Section Theory and Simulation of Nanostructures)
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