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Keywords = P-V—photo-voltaic

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10 pages, 2445 KB  
Article
Optimization of Effective Doping Concentration of Emitter for Ideal c-Si Solar Cell Device with PC1D Simulation
by Maruthamuthu Subramanian, Balaji Nagarajan, Aishwarya Ravichandran, Varsha Subhash Betageri, Gokul Sidarth Thirunavukkarasu, Elmira Jamei, Mehdi Seyedmahmoudian, Alex Stojcevski, Saad Mekhilef and Vasudeva Reddy Minnam Reddy
Crystals 2022, 12(2), 244; https://doi.org/10.3390/cryst12020244 - 11 Feb 2022
Cited by 19 | Viewed by 5430
Abstract
Increasing silicon solar cell efficiency plays a vital role in improving the dominant market share of photo-voltaic systems in the renewable energy sector. The performance of the solar cells can be evaluated by making a profound analysis on various effective parameters, such as [...] Read more.
Increasing silicon solar cell efficiency plays a vital role in improving the dominant market share of photo-voltaic systems in the renewable energy sector. The performance of the solar cells can be evaluated by making a profound analysis on various effective parameters, such as the sheet resistance, doping concentration, thickness of the solar cell, arbitrary dopant profile, etc., using software simulation tools, such as PC1D. In this paper, we present the observations obtained from the evaluation carried out on the impact of sheet resistance on the solar cell’s parameters using PC1D software. After which, the EDNA2 simulation tool was used to analyse the emitter saturation current density for the chosen arbitrary dopant profile. Results indicated that the diffusion profile with low surface concentration and shallow junction depth can improve the blue response at the frontal side of the solar cell. The emitter saturation current density decreases from 66.52 to 36.82 fA/cm2 for the subsequent increase in sheet resistance. The blue response also increased from 89.6% to 97.5% with rise in sheet resistance. In addition, the short circuit density and open circuit voltage was also observed to be improved by 0.6 mA/cm2 and 3 mV for the sheet resistance value of 130 Ω/sq, which resulted in achieving the highest efficiency of 20.6%. Full article
(This article belongs to the Special Issue Silicon and Graphene Based Materials and Related Devices)
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37 pages, 8437 KB  
Article
A Highly Accurate NILM: With an Electro-Spectral Space That Best Fits Algorithm’s National Deployment Requirements
by Netzah Calamaro, Moshe Donko and Doron Shmilovitz
Energies 2021, 14(21), 7410; https://doi.org/10.3390/en14217410 - 7 Nov 2021
Cited by 5 | Viewed by 3024
Abstract
The central problems of some of the existing Non-Intrusive Load Monitoring (NILM) algorithms are indicated as: (1) higher required electrical device identification accuracy; (2) the fact that they enable training over a larger device count; and (3) their ability to be trained faster, [...] Read more.
The central problems of some of the existing Non-Intrusive Load Monitoring (NILM) algorithms are indicated as: (1) higher required electrical device identification accuracy; (2) the fact that they enable training over a larger device count; and (3) their ability to be trained faster, limiting them from usage in industrial premises and external grids due to their sensitivity to various device types found in residential premises. The algorithm accuracy is higher compared to previous work and is capable of training over at least thirteen electrical devices collaboratively, a number that could be much higher if such a dataset is generated. The algorithm trains the data around 1.8×108 faster due to a higher sampling rate. These improvements potentially enable the algorithm to be suitable for future “grids and industrial premises load identification” systems. The algorithm builds on new principles: an electro-spectral features preprocessor, a faster waveform sampling sensor, a shorter required duration for the recorded data set, and the use of current waveforms vs. energy load profile, as was the case in previous NILM algorithms. Since the algorithm is intended for operation in any industrial premises or grid location, fast training is required. Known classification algorithms are comparatively trained using the proposed preprocessor over residential datasets, and in addition, the algorithm is compared to five known low-sampling NILM rate algorithms. The proposed spectral algorithm achieved 98% accuracy in terms of device identification over two international datasets, which is higher than the usual success of NILM algorithms. Full article
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