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Keywords = EUV mask metrology

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15 pages, 9597 KiB  
Article
Extreme Ultraviolet Multilayer Defect Profile Parameters Reconstruction via Transfer Learning with Fine-Tuned VGG-16
by Hala Mohammad, Jiawei Li, Bochao Li, Jamilu Tijjani Baraya, Sana Kone, Zhenlong Zhao, Xiaowei Song and Jingquan Lin
Micromachines 2025, 16(5), 541; https://doi.org/10.3390/mi16050541 - 30 Apr 2025
Viewed by 536
Abstract
Extracting defect profile parameters from measured defect images poses a significant challenge in extreme ultraviolet (EUV) multilayer defect metrologies, because these parameters are crucial for assessing defect printing behavior and determining appropriate repair strategies. This paper proposes to reconstruct defect profile parameters from [...] Read more.
Extracting defect profile parameters from measured defect images poses a significant challenge in extreme ultraviolet (EUV) multilayer defect metrologies, because these parameters are crucial for assessing defect printing behavior and determining appropriate repair strategies. This paper proposes to reconstruct defect profile parameters from reflected field intensity images of a phase defect assisted by transfer learning with fine-tuning. These images are generated through simulations using the rigorous finite-difference time-domain (FDTD) method. The VGG-16 pre-trained model, known for its robust feature extraction capability, is adopted and fine-tuned to map the intensity images to the defect profile parameters. The results demonstrate that the proposed approach accurately reconstructs multilayer defect profile parameters, thus providing important information for mask repair strategies. Full article
(This article belongs to the Special Issue Recent Advances in Lithography)
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13 pages, 3806 KiB  
Article
Impact of Sn Particle-Induced Mask Diffraction on EUV Lithography Performance Across Different Pattern Types
by Seungchan Moon, Dong Gi Lee, Jinhyuk Choi, Junho Hong, Taeho Lee, Yasin Ekinci and Jinho Ahn
Photonics 2025, 12(3), 266; https://doi.org/10.3390/photonics12030266 - 14 Mar 2025
Cited by 1 | Viewed by 1676
Abstract
This study investigates the differences in the lithographic impact of particles on the pellicle surface depending on the type of extreme ultraviolet (EUV) mask pattern. Using an EUV ptychography microscope, we analyzed how mask imaging performance is affected by locally obstructed mask diffraction [...] Read more.
This study investigates the differences in the lithographic impact of particles on the pellicle surface depending on the type of extreme ultraviolet (EUV) mask pattern. Using an EUV ptychography microscope, we analyzed how mask imaging performance is affected by locally obstructed mask diffraction caused by a 10 μm × 10 μm patterned tin particle intentionally fabricated on the pellicle surface. The resulting critical dimension variations were found to be approximately three times greater in line-and-space patterns than in contact hole patterns. Based on these findings, we recommend defining the critical size of particles according to the mask pattern type to optimize lithographic quality. Full article
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