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Keywords = AlGaN photocathode

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6 pages, 1201 KiB  
Communication
The Time Response of a Uniformly Doped Transmission-Mode NEA AlGaN Photocathode Applied to a Solar-Blind Ultraviolet Detecting System
by Jinjuan Du, Xiyao Li, Tiantian Jia, Hongjin Qiu, Yang Li, Rui Pu, Quanchao Zhang, Hongchang Cheng, Xin Guo, Jiabin Qiao and Huiyang He
Photonics 2024, 11(10), 986; https://doi.org/10.3390/photonics11100986 - 19 Oct 2024
Viewed by 902
Abstract
Due to the excellent quantum conversion and spectral response characteristics of the AlGaN photocathode, it has become the most promising III-V group semiconductor photocathode in solar-blind signal photoconversion devices in the ultraviolet band. Herein, the influence factors of the time-resolved characteristics of the [...] Read more.
Due to the excellent quantum conversion and spectral response characteristics of the AlGaN photocathode, it has become the most promising III-V group semiconductor photocathode in solar-blind signal photoconversion devices in the ultraviolet band. Herein, the influence factors of the time-resolved characteristics of the AlGaN photocathode are researched by solving the photoelectron continuity equation and photoelectron flow density equation, such as the AlN/AlGaN interface recombination rate, AlGaN electron diffusion coefficient, and AlGaN activation layer thickness. The results show that the response time of the AlGaN photocathode decreases gradually with the increase in AlGaN photoelectron diffusion coefficient and AlN/AlGaN interface recombination rate, but the response time of the AlGaN photocathode gradually becomes saturated with the further increase in AlN/AlGaN interface recombination rate. When the thickness of the AlGaN photocathode is reduced from 250 nm to 50 nm, the response time of the AlGaN photocathode decreases from 63.28 ps to 9.91 ps, and the response time of AlGaN photocathode greatly improves. This study provides theoretical guidance for the development of a fast response UV detector. Full article
(This article belongs to the Section Optoelectronics and Optical Materials)
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9 pages, 2033 KiB  
Article
Effects of Different Point Defects on the Electronic Properties of III–V Al0.5Ga0.5N Photocathode Nanowires
by Yiting Li, Qianglong Fang, Yang Shen, Shuqin Zhang, Xiaodong Yang, Lanzhi Ye and Liang Chen
Processes 2022, 10(4), 625; https://doi.org/10.3390/pr10040625 - 23 Mar 2022
Cited by 4 | Viewed by 2085
Abstract
AlxGa1−xN nanowires are the key materials for next-generation ultraviolet (UV) detectors. However, such devices have a low quantum efficiency caused by the introduction of defects and impurities throughout the preparation process of nanowires. Herein, the effects of different interstitial [...] Read more.
AlxGa1−xN nanowires are the key materials for next-generation ultraviolet (UV) detectors. However, such devices have a low quantum efficiency caused by the introduction of defects and impurities throughout the preparation process of nanowires. Herein, the effects of different interstitial defects and vacancy defects on the electronic structure of Al0.5Ga0.5N nanowires are investigated using density functional theory calculations. Our results successfully discovered that only the formation of an N interstitial defect is thermally stable. In addition, the introduction of different defects makes the different nanowires exhibit n-type or p-type characteristics. Additionally, different defects lead to a decrease in the conduction band minimum in band structures, which is the major cause for the decrease in work function and increase in electron affinity of Al0.5Ga0.5N nanowires. What is more, the calculation of the partial density of states also proved that the interstitial defects contribute to a re-hybridization of local electron orbitals and then cause more significant movement of the electron density. Our investigations provide theoretical guidance for the pursuit of higher-quantum-efficiency ultraviolet (UV) detectors. Full article
(This article belongs to the Special Issue State of the Art of Energy Storage and Conversion Materials)
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