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Keywords = 650 nm semiconductor laser

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19 pages, 14059 KiB  
Article
A Monoblock Light-Scattering Milk Fat Percentage and Somatic Cell Count Sensor for Use in Milking Systems
by Alexey V. Shkirin, Maxim E. Astashev, Dmitry N. Ignatenko, Nikolai V. Suyazov, Sergey N. Chirikov, Vladimir V. Kirsanov, Dmitriy Y. Pavkin, Yakov P. Lobachevsky and Sergey V. Gudkov
Sensors 2023, 23(20), 8618; https://doi.org/10.3390/s23208618 - 21 Oct 2023
Viewed by 2063
Abstract
A monoblock light-scattering sensor, which is capable of measuring the fat content of milk and indicating the excess by which the somatic cell count (SCC) is over the permissible level, has been developed for installation in dairy systems. In order for the sensor [...] Read more.
A monoblock light-scattering sensor, which is capable of measuring the fat content of milk and indicating the excess by which the somatic cell count (SCC) is over the permissible level, has been developed for installation in dairy systems. In order for the sensor to perform measurements when the milking machine is working in the “milk plug” mode, a flow-through unit is designed in the form of a pipe with a lateral cylindrical branch, in which milk accumulates so as to eliminate large bubbles and achieve continuity of the milk flow. The operation of the sensor is based on the registration of the angular intensity distribution of light scattered in the transparent cylindrical segment of the tube branch. A semiconductor laser with a wavelength of 650 nm is used as a light source for determining scattering in milk. The angular distribution of the scattered light intensity (scattering indicatrix) is recorded using an axial photodiode array. The fat content is determined by the average slope of the measured scattering indicatrix in the range of scattering angles 72–162°. The SCC level is estimated from the relative deviation of the forward scatter intensity normalized to the backscatter intensity with respect to uninfected milk. The sensor has been tested on a Yolochka-type milking machine. Full article
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8 pages, 3037 KiB  
Communication
Mode-Modulation Structure Based on 650 nm Ridge Waveguide Edge-Emitting Laser
by Xiao Sun, Peng Liu, Xiangen Ma, Xiaodong Zhang, Jian Su, Kang Chen, Qi Liu, Kai Jiang, Wenjing Tang, Wei Xia and Xiangang Xu
Photonics 2023, 10(3), 302; https://doi.org/10.3390/photonics10030302 - 12 Mar 2023
Cited by 7 | Viewed by 2693
Abstract
Traditional laser diodes operating at 650 nm are more prone to high-order mode excitation, resulting in poorer beam quality. In this paper, we designed GaInP–AlGaInP laser diodes (LD) with a 650 nm range and a trench mode-modulation structure based on the structure of [...] Read more.
Traditional laser diodes operating at 650 nm are more prone to high-order mode excitation, resulting in poorer beam quality. In this paper, we designed GaInP–AlGaInP laser diodes (LD) with a 650 nm range and a trench mode-modulation structure based on the structure of edge-emitting laser (EEL) diodes. The effect of the three-trench structure was investigated theoretically and experimentally. The right trench structure laser chips demonstrated good beam quality while maintaining a high power output. An electro-optical conversion efficiency of 56% was demonstrated with a slope efficiency of 1.32 W/A at a 40 mA current. The maximum optical output power reached 40.8 mW. Full article
(This article belongs to the Special Issue Advancements in Semiconductor Lasers)
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11 pages, 3129 KiB  
Article
Investigation of the Hue–Wavelength Response of a CMOS RGB-Based Image Sensor
by Hyeon-Woo Park, Ji-Won Choi, Ji-Young Choi, Kyung-Kwang Joo and Na-Ri Kim
Sensors 2022, 22(23), 9497; https://doi.org/10.3390/s22239497 - 5 Dec 2022
Cited by 11 | Viewed by 7052
Abstract
In this study, a non-linear hue–wavelength (H-W) curve was investigated from 400 to 650 nm. To date, no study has reported on H-W relationship measurements, especially down to the 400 nm region. A digital camera mounted with complementary metal oxide semiconductor (CMOS) image [...] Read more.
In this study, a non-linear hue–wavelength (H-W) curve was investigated from 400 to 650 nm. To date, no study has reported on H-W relationship measurements, especially down to the 400 nm region. A digital camera mounted with complementary metal oxide semiconductor (CMOS) image sensors was used. The obtained digital images of the sample were based on an RGB-based imaging analysis rather than multispectral imaging or hyperspectral imaging. In this study, we focused on the raw image to reconstruct the H-W curve. In addition, several factors affecting the digital image, such as exposure time or international organization for standardization (ISO), were investigated. In addition, cross check of the H-W response using laser was performed. We expect that our method will be useful as an auxiliary method in the future for obtaining the fluor emission wavelength information. Full article
(This article belongs to the Special Issue Optical Spectral Sensing and Imaging Technology)
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