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Authors = Livio Fanò

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14 pages, 1546 KiB  
Article
Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance
by Francesca Peverini, Saba Aziz, Aishah Bashiri, Marco Bizzarri, Maurizio Boscardin, Lucio Calcagnile, Carlo Calcatelli, Daniela Calvo, Silvia Caponi, Mirco Caprai, Domenico Caputo, Anna Paola Caricato, Roberto Catalano, Roberto Cirro, Giuseppe Antonio Pablo Cirrone, Michele Crivellari, Tommaso Croci, Giacomo Cuttone, Gianpiero de Cesare, Paolo De Remigis, Sylvain Dunand, Michele Fabi, Luca Frontini, Livio Fanò, Benedetta Gianfelici, Catia Grimani, Omar Hammad, Maria Ionica, Keida Kanxheri, Matthew Large, Francesca Lenta, Valentino Liberali, Nicola Lovecchio, Maurizio Martino, Giuseppe Maruccio, Giovanni Mazza, Mauro Menichelli, Anna Grazia Monteduro, Francesco Moscatelli, Arianna Morozzi, Augusto Nascetti, Stefania Pallotta, Andrea Papi, Daniele Passeri, Marco Petasecca, Giada Petringa, Igor Pis, Pisana Placidi, Gianluca Quarta, Silvia Rizzato, Alessandro Rossi, Giulia Rossi, Federico Sabbatini, Andrea Scorzoni, Leonello Servoli, Alberto Stabile, Silvia Tacchi, Cinzia Talamonti, Jonathan Thomet, Luca Tosti, Giovanni Verzellesi, Mattia Villani, Richard James Wheadon, Nicolas Wyrsch, Nicola Zema and Maddalena Pedioadd Show full author list remove Hide full author list
Nanomaterials 2024, 14(19), 1551; https://doi.org/10.3390/nano14191551 - 25 Sep 2024
Cited by 1 | Viewed by 2140
Abstract
This paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-Si have sparked interest in its application for radiation detection in both physics and medicine. Although amorphous [...] Read more.
This paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-Si have sparked interest in its application for radiation detection in both physics and medicine. Although amorphous silicon (a-Si) is inherently a highly defective material, hydrogenation significantly reduces defect density, enabling its use in radiation detector devices. Spectroscopic measurements provide insights into the intricate relationship between the structure and electronic properties of a-Si, enhancing our understanding of how specific configurations, such as the choice of substrate, can markedly influence detector performance. In this study, we compare the performance of a-Si detectors deposited on two different substrates: crystalline silicon (c-Si) and flexible Kapton. Our findings suggest that detectors deposited on Kapton exhibit reduced sensitivity, despite having comparable noise and leakage current levels to those on crystalline silicon. We hypothesize that this discrepancy may be attributed to the substrate material, differences in film morphology, and/or the alignment of energy levels. Further measurements are planned to substantiate these hypotheses. Full article
(This article belongs to the Special Issue Advanced Nanotechnology in Intelligent Flexible Devices)
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16 pages, 6578 KiB  
Article
HUSH (Hiking in Urban Scientific Heritage): The Augmented Reality for Enhancing the Geological and Naturalistic Heritage in Urban Areas
by Laura Melelli, Giulio Bianchini and Livio Fanò
Appl. Sci. 2023, 13(15), 8857; https://doi.org/10.3390/app13158857 - 31 Jul 2023
Cited by 3 | Viewed by 1556
Abstract
Over the past two decades, significant efforts have been made to diversify the tourism industry and enhance its educational experience. One such endeavor is urban trekking and geotourism, which have emerged as important means of promoting geological knowledge. The recent advancements in augmented [...] Read more.
Over the past two decades, significant efforts have been made to diversify the tourism industry and enhance its educational experience. One such endeavor is urban trekking and geotourism, which have emerged as important means of promoting geological knowledge. The recent advancements in augmented reality technologies as well as the increasing availability of ‘born digital’ data such as those gathered from social media create a basis for the development of immersive and customized touristic experiences. Urban scientific heritage, augmented reality, and data mining are the key elements of the HUSH project. Its first focus is the identification of the naturalistic components in a given urban area (flora, fauna, and geological features) through literature surveys and scientific research. These factors become points of interest (PoIs) along touristic paths, where they are connected to the historical and artistic components of the area. Augmented reality serves as the medium through which the user can access this content. The contents are delivered as videos, text, images, or interactive 3D models. The mobile application from this project is a useful tool for promoting geoheritage and naturalistic values in urban areas and for improving the awareness and the sustainability of our cities. Full article
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14 pages, 2445 KiB  
Article
High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices
by Francesca Peverini, Marco Bizzarri, Maurizio Boscardin, Lucio Calcagnile, Mirco Caprai, Anna Paola Caricato, Giuseppe Antonio Pablo Cirrone, Michele Crivellari, Giacomo Cuttone, Sylvain Dunand, Livio Fanò, Benedetta Gianfelici, Omar Hammad, Maria Ionica, Keida Kanxheri, Matthew Large, Giuseppe Maruccio, Mauro Menichelli, Anna Grazia Monteduro, Francesco Moscatelli, Arianna Morozzi, Stefania Pallotta, Andrea Papi, Daniele Passeri, Marco Petasecca, Giada Petringa, Igor Pis, Gianluca Quarta, Silvia Rizzato, Alessandro Rossi, Giulia Rossi, Andrea Scorzoni, Cristian Soncini, Leonello Servoli, Silvia Tacchi, Cinzia Talamonti, Giovanni Verzellesi, Nicolas Wyrsch, Nicola Zema and Maddalena Pedioadd Show full author list remove Hide full author list
Nanomaterials 2022, 12(19), 3466; https://doi.org/10.3390/nano12193466 - 4 Oct 2022
Cited by 4 | Viewed by 2372
Abstract
In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devices based on hydrogenated amorphous silicon (a-Si:H). [...] Read more.
In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devices based on hydrogenated amorphous silicon (a-Si:H). This investigation will be performed by mean of high-resolution photoemission, soft X-Ray absorption and atomic force microscopy. Due to dangling bonds, the amorphous silicon is a highly defective material. However, by hydrogenation it is possible to reduce the density of the defect by several orders of magnitude, using hydrogenation and this will allow its usage in radiation detector devices. The investigation of the damage induced by exposure to high energy irradiation and its microscopic origin is fundamental since the amount of defects determine the electronic properties of the a-Si:H. The comparison of the spectroscopic results on bare and irradiated samples shows an increased degree of disorder and a strong reduction of the Si-H bonds after irradiation. After annealing we observe a partial recovering of the Si-H bonds, reducing the disorder in the Si (possibly due to the lowering of the radiation-induced dangling bonds). Moreover, effects in the uppermost coating are also observed by spectroscopies. Full article
(This article belongs to the Special Issue Radiation Tolerance Nanomaterials)
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14 pages, 5022 KiB  
Article
Fabrication of a Hydrogenated Amorphous Silicon Detector in 3-D Geometry and Preliminary Test on Planar Prototypes
by Mauro Menichelli, Marco Bizzarri, Maurizio Boscardin, Mirco Caprai, Anna Paola Caricato, Giuseppe Antonio Pablo Cirrone, Michele Crivellari, Ilaria Cupparo, Giacomo Cuttone, Silvain Dunand, Livio Fanò, Omar Hammad Alì, Maria Ionica, Keida Kanxheri, Matthew Large, Giuseppe Maruccio, Anna Grazia Monteduro, Francesco Moscatelli, Arianna Morozzi, Andrea Papi, Daniele Passeri, Marco Petasecca, Silvia Rizzato, Alessandro Rossi, Andrea Scorzoni, Leonello Servoli, Cinzia Talamonti, Giovanni Verzellesi and Nicolas Wyrschadd Show full author list remove Hide full author list
Instruments 2021, 5(4), 32; https://doi.org/10.3390/instruments5040032 - 8 Oct 2021
Cited by 11 | Viewed by 4047
Abstract
Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapor deposition (PECVD) of SiH4 (silane) mixed with hydrogen. The resulting material shows outstanding radiation hardness properties and can be deposited on a wide variety of substrates. Devices employing a-Si:H technologies have [...] Read more.
Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapor deposition (PECVD) of SiH4 (silane) mixed with hydrogen. The resulting material shows outstanding radiation hardness properties and can be deposited on a wide variety of substrates. Devices employing a-Si:H technologies have been used to detect many different kinds of radiation, namely, minimum ionizing particles (MIPs), X-rays, neutrons, and ions, as well as low-energy protons and alphas. However, the detection of MIPs using planar a-Si:H diodes has proven difficult due to their unsatisfactory S/N ratio arising from a combination of high leakage current, high capacitance, and limited charge collection efficiency (50% at best for a 30 µm planar diode). To overcome these limitations, the 3D-SiAm collaboration proposes employing a 3D detector geometry. The use of vertical electrodes allows for a small collection distance to be maintained while preserving a large detector thickness for charge generation. The depletion voltage in this configuration can be kept below 400 V with a consequent reduction in the leakage current. In this paper, following a detailed description of the fabrication process, the results of the tests performed on the planar p-i-n structures made with ion implantation of the dopants and with carrier selective contacts are illustrated. Full article
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