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        Journal: Processes, 2021
        Volume: 9 
                	Number: 2193 
                
        
        Article:
        Back-Channel Etched In-Ga-Zn-O Thin-Film Transistor Utilizing Selective Wet-Etching of Copper Source and Drain 
        Authors: 
       	by
                    Rauf Khan, Muhamad Affiq Bin Misran, Michitaka Ohtaki, Jun Tae Song, Tatsumi Ishihara and Reiji Hattori        
        Link:
        https://www.mdpi.com/2227-9717/9/12/2193
        
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