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Journal: Processes, 2021
Volume: 9
Number: 2193
Article:
Back-Channel Etched In-Ga-Zn-O Thin-Film Transistor Utilizing Selective Wet-Etching of Copper Source and Drain
Authors:
by
Rauf Khan, Muhamad Affiq Bin Misran, Michitaka Ohtaki, Jun Tae Song, Tatsumi Ishihara and Reiji Hattori
Link:
https://www.mdpi.com/2227-9717/9/12/2193
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