High-Performance IGZO Nanowire-Based Field-Effect Transistors with Random-Network Channels by Electrospun PVP Nanofiber Template Transfer
Abstract
:1. Introduction
2. Experimental
2.1. Preparation of the IGZO Precursor Solution and Electrospinning of IGZO Nanofibers (NFs)
2.2. Formation of IGZO Nanowires (NWs)
2.3. Fabrication of IGZO NF- and IGZO NW-Based FETs
2.4. Characterization
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Channel | μFE (cm2 V−1 s−1) | SS (V/dec) | Ion/Ioff | VTH (V) | VH (V) | |||
---|---|---|---|---|---|---|---|---|
Avg. | RSD | Avg. | RSD | Avg. | SD | |||
Nanofibers | 0.16 | 0.38 | 1.62 | 0.23 | 6.28 × 104 | 9.87 | 1.31 | 7.25 |
Nanowires | 11.81 | 0.29 | 0.32 | 0.12 | 7.39 × 108 | 0.52 | 0.13 | 0.45 |
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Park, K.-W.; Cho, W.-J. High-Performance IGZO Nanowire-Based Field-Effect Transistors with Random-Network Channels by Electrospun PVP Nanofiber Template Transfer. Polymers 2022, 14, 651. https://doi.org/10.3390/polym14030651
Park K-W, Cho W-J. High-Performance IGZO Nanowire-Based Field-Effect Transistors with Random-Network Channels by Electrospun PVP Nanofiber Template Transfer. Polymers. 2022; 14(3):651. https://doi.org/10.3390/polym14030651
Chicago/Turabian StylePark, Ki-Woong, and Won-Ju Cho. 2022. "High-Performance IGZO Nanowire-Based Field-Effect Transistors with Random-Network Channels by Electrospun PVP Nanofiber Template Transfer" Polymers 14, no. 3: 651. https://doi.org/10.3390/polym14030651