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Open AccessArticle

The Effect of Trimethylaluminum Flow Rate on the Structure and Optical Properties of AlInGaN Quaternary Epilayers

Department of Opto-Electronic Information Science, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China
Authors to whom correspondence should be addressed.
Academic Editors: Alain Largeteau, Mythili Prakasam and Helmut Cölfen
Crystals 2017, 7(3), 69;
Received: 27 November 2016 / Revised: 15 February 2017 / Accepted: 22 February 2017 / Published: 6 March 2017
(This article belongs to the Special Issue Crystal Growth for Optoelectronic and Piezoelectric Applications)
In this work, a series of quaternary AlxInyGa1−x−yN thin films have been successfully achieved using metal organic chemical vapor deposition (MOCVD) method with adjustable trimethylaluminum (TMA) flows. Surface morphology and optical properties of AlxInyGa1−x−yN films have been evaluated. The indium segregation effect on the enhancement of UV luminescence emission in AlxInyGa1-x-yN films with increasing TMA flows was investigated. Our results shed some lights on future optical materials design and LED/LD applications. View Full-Text
Keywords: trimethylaluminum flows; AlInGaN alloys; photoluminescence trimethylaluminum flows; AlInGaN alloys; photoluminescence
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MDPI and ACS Style

Wang, D.; Liu, G.; Jiao, S.; Kong, L.; Liu, T.; Liu, T.; Wang, J.; Guo, F.; Luan, C.; Li, Z. The Effect of Trimethylaluminum Flow Rate on the Structure and Optical Properties of AlInGaN Quaternary Epilayers. Crystals 2017, 7, 69.

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