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Open AccessArticle

The Effect of Trimethylaluminum Flow Rate on the Structure and Optical Properties of AlInGaN Quaternary Epilayers

1
Department of Opto-Electronic Information Science, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
2
Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
3
Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China
*
Authors to whom correspondence should be addressed.
Academic Editors: Alain Largeteau, Mythili Prakasam and Helmut Cölfen
Crystals 2017, 7(3), 69; https://doi.org/10.3390/cryst7030069
Received: 27 November 2016 / Revised: 15 February 2017 / Accepted: 22 February 2017 / Published: 6 March 2017
(This article belongs to the Special Issue Crystal Growth for Optoelectronic and Piezoelectric Applications)
In this work, a series of quaternary AlxInyGa1−x−yN thin films have been successfully achieved using metal organic chemical vapor deposition (MOCVD) method with adjustable trimethylaluminum (TMA) flows. Surface morphology and optical properties of AlxInyGa1−x−yN films have been evaluated. The indium segregation effect on the enhancement of UV luminescence emission in AlxInyGa1-x-yN films with increasing TMA flows was investigated. Our results shed some lights on future optical materials design and LED/LD applications. View Full-Text
Keywords: trimethylaluminum flows; AlInGaN alloys; photoluminescence trimethylaluminum flows; AlInGaN alloys; photoluminescence
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MDPI and ACS Style

Wang, D.; Liu, G.; Jiao, S.; Kong, L.; Liu, T.; Liu, T.; Wang, J.; Guo, F.; Luan, C.; Li, Z. The Effect of Trimethylaluminum Flow Rate on the Structure and Optical Properties of AlInGaN Quaternary Epilayers. Crystals 2017, 7, 69.

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