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Wangila E, Gunder C, Zamani-Alavijeh M, Maia de Oliveira F, Kryvyi S, Sheibani A, Mazur YI, Yu S-Q, Salamo GJ. High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam. Crystals. 2024; 14(8):724. https://doi.org/10.3390/cryst14080724

Wangila, Emmanuel, Calbi Gunder, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, and Gregory J. Salamo. 2024. "High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam" Crystals 14, no. 8: 724. https://doi.org/10.3390/cryst14080724

Wangila, E., Gunder, C., Zamani-Alavijeh, M., Maia de Oliveira, F., Kryvyi, S., Sheibani, A., Mazur, Y. I., Yu, S.-Q., & Salamo, G. J. (2024). High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam. Crystals, 14(8), 724. https://doi.org/10.3390/cryst14080724