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Journal: Crystals, 2024
Volume: 14
Number: 421
421
Article: Low-Temperature Migration-Enhanced Epitaxial Growth of High-Quality (InAs)₄(GaAs)₃/Be-Doped InAlAs Quantum Wells for THz Applications
Authors: by Linsheng Liu, Zhen Deng, Guipeng Liu, Chongtao Kong, Hao Du, Ruolin Chen, Jianfeng Yan, Le Qin, Shuxiang Song, Xinhui Zhang and Wenxin Wang
Link: https://www.mdpi.com/2073-4352/14/5/421

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