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Journal: Crystals, 2024
Volume: 14
Number: 421
Article:
Low-Temperature Migration-Enhanced Epitaxial Growth of High-Quality (InAs)4(GaAs)3/Be-Doped InAlAs Quantum Wells for THz Applications
Authors:
by
Linsheng Liu, Zhen Deng, Guipeng Liu, Chongtao Kong, Hao Du, Ruolin Chen, Jianfeng Yan, Le Qin, Shuxiang Song, Xinhui Zhang and Wenxin Wang
Link:
https://www.mdpi.com/2073-4352/14/5/421
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