Yakovlev, N.N.; Almaev, A.V.; Kushnarev, B.O.; Verkholetov, M.G.; Poliakov, M.V.; Zinovev, M.M.
β-Ga2O3 Schottky Barrier Diode with Ion Beam Sputter-Deposited Semi-Insulating Layer. Crystals 2024, 14, 123.
https://doi.org/10.3390/cryst14020123
AMA Style
Yakovlev NN, Almaev AV, Kushnarev BO, Verkholetov MG, Poliakov MV, Zinovev MM.
β-Ga2O3 Schottky Barrier Diode with Ion Beam Sputter-Deposited Semi-Insulating Layer. Crystals. 2024; 14(2):123.
https://doi.org/10.3390/cryst14020123
Chicago/Turabian Style
Yakovlev, Nikita N., Aleksei V. Almaev, Bogdan O. Kushnarev, Maksim G. Verkholetov, Maksim V. Poliakov, and Mikhail M. Zinovev.
2024. "β-Ga2O3 Schottky Barrier Diode with Ion Beam Sputter-Deposited Semi-Insulating Layer" Crystals 14, no. 2: 123.
https://doi.org/10.3390/cryst14020123
APA Style
Yakovlev, N. N., Almaev, A. V., Kushnarev, B. O., Verkholetov, M. G., Poliakov, M. V., & Zinovev, M. M.
(2024). β-Ga2O3 Schottky Barrier Diode with Ion Beam Sputter-Deposited Semi-Insulating Layer. Crystals, 14(2), 123.
https://doi.org/10.3390/cryst14020123