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Journal: Crystals, 2024
Volume: 14
Number: 984
Article:
Performance Enhancement of MoSe2 and WSe2 Based Junction Field Effect Transistors with Gate-All-Around Structure
Authors:
by
Changlim Woo, Abdelkader Abderrahmane, Pangum Jung and Pilju Ko
Link:
https://www.mdpi.com/2073-4352/14/11/984
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