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Journal: Crystals, 2024
Volume: 14
Number: 984

Article: Performance Enhancement of MoSe2 and WSe2 Based Junction Field Effect Transistors with Gate-All-Around Structure
Authors: by Changlim Woo, Abdelkader Abderrahmane, Pangum Jung and Pilju Ko
Link: https://www.mdpi.com/2073-4352/14/11/984

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