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Journal: Crystals, 2023
Volume: 13
Number: 650
Article:
A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD)
Authors:
by
Hongyu Cheng, Wenmao Li, Peiran Wang, Jianguo Chen, Qing Wang and Hongyu Yu
Link:
https://www.mdpi.com/2073-4352/13/4/650
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