Ewing, J.; Lynsky, C.; Zhang, J.; Shapturenka, P.; Wong, M.; Smith, J.; Iza, M.; Speck, J.S.; DenBaars, S.P.
Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon. Crystals 2022, 12, 1216.
https://doi.org/10.3390/cryst12091216
AMA Style
Ewing J, Lynsky C, Zhang J, Shapturenka P, Wong M, Smith J, Iza M, Speck JS, DenBaars SP.
Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon. Crystals. 2022; 12(9):1216.
https://doi.org/10.3390/cryst12091216
Chicago/Turabian Style
Ewing, Jacob, Cheyenne Lynsky, Jiaao Zhang, Pavel Shapturenka, Matthew Wong, Jordan Smith, Michael Iza, James S. Speck, and Stephen P. DenBaars.
2022. "Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon" Crystals 12, no. 9: 1216.
https://doi.org/10.3390/cryst12091216
APA Style
Ewing, J., Lynsky, C., Zhang, J., Shapturenka, P., Wong, M., Smith, J., Iza, M., Speck, J. S., & DenBaars, S. P.
(2022). Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon. Crystals, 12(9), 1216.
https://doi.org/10.3390/cryst12091216
