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Journal: Crystals, 2021
Volume: 11
Number: 1006
1006
Article: Highly Conductive n-Al_0.65Ga_0.35N Grown by MOCVD Using Low V/III Ratio
Authors: by Christian J. Zollner, Yifan Yao, Michael Wang, Feng Wu, Michael Iza, James S. Speck, Steven P. DenBaars and Shuji Nakamura
Link: https://www.mdpi.com/2073-4352/11/8/1006

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