Reilly, C.E.; Hatui, N.; Mates, T.E.; Koirala, P.; Oni, A.A.; Nakamura, S.; DenBaars, S.P.; Keller, S.
Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine. Crystals 2021, 11, 1412.
https://doi.org/10.3390/cryst11111412
AMA Style
Reilly CE, Hatui N, Mates TE, Koirala P, Oni AA, Nakamura S, DenBaars SP, Keller S.
Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine. Crystals. 2021; 11(11):1412.
https://doi.org/10.3390/cryst11111412
Chicago/Turabian Style
Reilly, Caroline E., Nirupam Hatui, Thomas E. Mates, Pratik Koirala, Adedapo A. Oni, Shuji Nakamura, Steven P. DenBaars, and Stacia Keller.
2021. "Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine" Crystals 11, no. 11: 1412.
https://doi.org/10.3390/cryst11111412
APA Style
Reilly, C. E., Hatui, N., Mates, T. E., Koirala, P., Oni, A. A., Nakamura, S., DenBaars, S. P., & Keller, S.
(2021). Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine. Crystals, 11(11), 1412.
https://doi.org/10.3390/cryst11111412
