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Keywords = transmission line transformer (TLT)

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13 pages, 4660 KiB  
Article
Modified Broadband Ruthroff-Type Transmission Line Transformer Balun for Isolation-Enhanced Passive Mixer Design
by Ding He, Zhentao Yu, Jie Chen, Kaiyuan Du, Zhiqiang Zhu, Pu Cheng and Cheng Tan
Micromachines 2024, 15(3), 332; https://doi.org/10.3390/mi15030332 - 28 Feb 2024
Viewed by 2413
Abstract
Generalized broadband operation facilitates multifunction or multiband highly integrated applications, such as modern transceiver systems, where ultra-wideband bidirectional passive mixers are favored to avoid a complex up/down-conversion scheme. In this paper, a modified Ruthroff-type transmission line transformer (TLT) balun is presented to enhance [...] Read more.
Generalized broadband operation facilitates multifunction or multiband highly integrated applications, such as modern transceiver systems, where ultra-wideband bidirectional passive mixers are favored to avoid a complex up/down-conversion scheme. In this paper, a modified Ruthroff-type transmission line transformer (TLT) balun is presented to enhance the isolation of the mixer from the local oscillator (LO) to the radio frequency (RF). Compared to the conventional methods, the proposed Ruthroff-type architecture adopts a combination of shunt capacitors and parallel coupled lines to improve the return loss at the LO port, thus effectively avoiding the area consumption for the diode-to-balun impedance transformation while simultaneously providing a suitable point for IF extraction. In addition, a parallel compensation technique consisting of an inductor and resistor is applied to the RF balun to significantly improve the amplitude/phase balance performance over a wide bandwidth. Benefiting from the aforementioned operations, an isolation-enhanced 8–30 GHz passive double-balanced mixer is designed as a proof-of-principle demonstration via 0.15-micrometer GaAs p-HEMT technology. It exhibits ultra-broadband performance with 7 dB average conversion loss and 50 dB LO-to-RF isolation under 15 dBm LO power. The monolithic microwave integrated circuit area is 0.96 × 1.68 mm2 including all pads. Full article
(This article belongs to the Special Issue Recent Advances in Microwave Components and Devices, 2nd Edition)
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