Search Results (3)

Identifying efficient and physically meaningful descriptors is crucial for the rational design of hydrogen evolution reaction (HER) catalysts. In this study, we systematically investigate the HER activity of transition metal dichalcogenide (TMD) monolayers by combining density functional theory (DFT) calculations and machine learning techniques. By exploring the relationship between key electronic properties, including the conduction band minimum (CBM), p_z band center, and hydrogen adsorption free energy (ΔG_*H), we establish a strong linear correlation between the CBM and ΔG_*H, identifying the CBM as a reliable and physically meaningful descriptor for HER activity. Furthermore, this correlation is validated in vacancy-defected TMD systems, demonstrating that the CBM remains an effective descriptor even in the presence of structural defects. To enable the rapid and accurate prediction of the CBM, we develop an interpretable three-dimensional model using the Sure Independence Screening and Sparsifying Operator (SISSO) algorithm. The SISSO model achieves a high predictive accuracy, with correlation coefficients (r) and coefficients of determination (R²) reaching 0.98 and 0.97 in the training and 0.99 and 0.99 in the validation tests, respectively. This study provides an efficient computational framework that combines first-principles calculations and machine learning to accelerate the screening and design of high-performance TMD-based HER catalysts. Full article

The field of materials science has experienced a transformative shift with the emergence of high-entropy materials (HEMs), which possess a unique combination of properties that traditional single-phase materials lack. Among these, high-entropy nitrides (HENs) stand out for their exceptional mechanical strength, thermal stability, and resistance to extreme environments, making them highly sought after for applications in aerospace, defense, and energy sectors. Central to the design of these materials is their entropy forming ability (EFA), a measure of a material’s propensity to form a single-phase, disordered structure. This study introduces the application of the sure independence screening and sparsifying operator (SISSO), a machine learning technique, to predict the EFA of HEN ceramics. By utilizing a rich dataset curated from theoretical computational data, SISSO has been trained to identify the most critical features contributing to EFA. The model’s strong interpretability allows for the extraction of complex mathematical expressions, providing deep insights into the material’s composition and its impact on EFA. The predictive performance of the SISSO model is meticulously validated against theoretical benchmarks and compared with other machine learning methodologies, demonstrating its superior accuracy and reliability. This research not only contributes to the growing body of knowledge on HEMs but also paves the way for the efficient discovery and development of new HEN materials with tailored properties for advanced technological applications. Full article

The band gap is a key parameter in semiconductor materials that is essential for advancing optoelectronic device development. Accurately predicting band gaps of materials at low cost is a significant challenge in materials science. Although many machine learning (ML) models for band gap prediction already exist, they often suffer from low interpretability and lack theoretical support from a physical perspective. In this study, we address these challenges by using a combination of traditional ML algorithms and the ‘white-box’ sure independence screening and sparsifying operator (SISSO) approach. Specifically, we enhance the interpretability and accuracy of band gap predictions for binary semiconductors by integrating the importance rankings of support vector regression (SVR), random forests (RF), and gradient boosting decision trees (GBDT) with SISSO models. Our model uses only the intrinsic features of the constituent elements and their band gaps calculated using the Perdew–Burke–Ernzerhof method, significantly reducing computational demands. We have applied our model to predict the band gaps of 1208 theoretically stable binary compounds. Importantly, the model highlights the critical role of electronegativity in determining material band gaps. This insight not only enriches our understanding of the physical principles underlying band gap prediction but also underscores the potential of our approach in guiding the synthesis of new and valuable semiconductor materials. Full article