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Keywords = scanning tunneling miscroscopy

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10 pages, 4113 KiB  
Article
Thickness-Dependent Band Gap Modification in BaBiO3
by Rosa Luca Bouwmeester, Alexander Brinkman and Kai Sotthewes
Nanomaterials 2021, 11(4), 882; https://doi.org/10.3390/nano11040882 - 30 Mar 2021
Cited by 9 | Viewed by 3157
Abstract
The material BaBiO3 is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because the oxygen octahedra breathing mode will be suppressed as reported recently. Here, we confirm the influence of the oxygen breathing mode [...] Read more.
The material BaBiO3 is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because the oxygen octahedra breathing mode will be suppressed as reported recently. Here, we confirm the influence of the oxygen breathing mode on the size of the band gap. The electronic properties of a BaBiO3 thickness series are studied using in-situ scanning tunneling microscopy. We observe a wide-gap (EG > 1.2 V) to small-gap (EG ≈ 0.07 eV) semiconductor transition as a function of a decreasing BaBiO3 film thickness. However, even for an ultra-thin BaBiO3 film, no metallic state is present. The dependence of the band gap size is found to be coinciding with the intensity of the Raman response of the breathing phonon mode as a function of thickness. Full article
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