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Keywords = rectangular QW

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15 pages, 3703 KiB  
Article
Tuning Intermediate Band Solar Cell Efficiency: The Interplay of Electric Fields, Composition, Impurities, and Confinement
by Hassan Abboudi, Redouane En-nadir, Mohamed A. Basyooni-M. Kabatas, Ayoub El Baraka, Ilyass Ez-zejjari, Haddou El Ghazi and Ahmed Sali
Nanomaterials 2024, 14(22), 1858; https://doi.org/10.3390/nano14221858 - 20 Nov 2024
Cited by 3 | Viewed by 941
Abstract
In this study, we investigated the influence of structural parameters, including active region dimensions, electric field intensity, In-composition, impurity position, and potential profiles, on the energy levels, sub-gap transitions, and photovoltaic characteristics of a p-GaN/i-(In, Ga)N/GaN-n (p-QW-n) structure. The finite element method (FEM) [...] Read more.
In this study, we investigated the influence of structural parameters, including active region dimensions, electric field intensity, In-composition, impurity position, and potential profiles, on the energy levels, sub-gap transitions, and photovoltaic characteristics of a p-GaN/i-(In, Ga)N/GaN-n (p-QW-n) structure. The finite element method (FEM) has been used to solve numerically the Schrödinger equation. We found that particle and sub-gap energy levels are susceptible to well width, electric field, and impurity position. Particle energy decreases with increasing well size and electric field intensity, while impurity position affects energy based on proximity to the well center. Potential profile shapes, such as rectangular (RQW) and parabolic (PQW), also play a significant role, with PQW profiles providing stronger particle confinement. IB width increases with electric field intensity and saturates at higher In-content. Voc increases with field strength but decreases with In-content, and the parabolic profile yields higher efficiency than the rectangular one. Photovoltaic efficiency is improved with an appropriately oriented electric field and decreases with higher In-content and field intensity. These findings highlight the critical role of structural parameters in optimizing QW-IBSC performance. Full article
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13 pages, 2505 KiB  
Article
Low-Frequency Noise Characteristics of (Al, Ga)As and Ga(As, Bi) Quantum Well Structures for NIR Laser Diodes
by Simona Armalytė, Justinas Glemža, Vytautas Jonkus, Sandra Pralgauskaitė, Jonas Matukas, Simona Pūkienė, Andrea Zelioli, Evelina Dudutienė, Arnas Naujokaitis, Andrius Bičiūnas, Bronislovas Čechavičius and Renata Butkutė
Sensors 2023, 23(4), 2282; https://doi.org/10.3390/s23042282 - 17 Feb 2023
Cited by 3 | Viewed by 2363
Abstract
Fabry–Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the 780–1100 nm spectral range were fabricated and investigated for optimization of the laser QW design and composition of QWs. The [...] Read more.
Fabry–Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the 780–1100 nm spectral range were fabricated and investigated for optimization of the laser QW design and composition of QWs. The laser structures were grown using the molecular beam epitaxy (MBE) technique on the n-type GaAs(100) substrate. The photolithography process was performed to fabricate edge-emitting laser bars of 5 μm by 500 μm in size. The temperature-dependent power-current measurements showed that the characteristic threshold current of the fabricated LDs was in the 60–120 mA range. Light and current characteristics were almost linear up to (1.2–2.0) Ith. Low-frequency 10 Hz–20 kHz electrical and optical noise characteristics were measured in the temperature range from 70 K to 290 K and showed that the low-frequency optical and electrical noise spectra are comprised of 1/f and Lorentzian-type components. The positive cross-correlation between optical and electrical fluctuations was observed. Full article
(This article belongs to the Special Issue Advances in Microwave Communications and Radar Technologies)
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